NPN Resistor Equipped Transistor PDTC114YT 215 by Nexperia for SMD Applications and Digital Circuits
Key Attributes
Model Number:
PDTC114YT,215
Product Custom Attributes
Input Resistor:
10kΩ
Resistor Ratio:
5.7
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC114YT,215
Package:
SOT-23
Product Description
Product Overview
The Nexperia PDTC114Y series is a family of NPN Resistor-Equipped Transistors (RETs) designed for surface-mounted device (SMD) applications. These transistors feature built-in bias resistors, reducing component count, simplifying circuit design, and lowering pick-and-place costs. They are AEC-Q101 qualified, making them suitable for digital applications in the automotive and industrial segments. The PDTC114Y series offers a cost-saving alternative to traditional BC847/857 series in digital applications, ideal for controlling IC inputs and switching loads.
Product Attributes
- Brand: Nexperia
- Type: NPN Resistor-Equipped Transistor (RET)
- Package Type: Surface-Mounted Device (SMD)
- Qualification: AEC-Q101
Technical Specifications
| Type Number | Package | Description | R1 (k) | R2/R1 Ratio | VCEO (V) | IO (mA) |
|---|---|---|---|---|---|---|
| PDTC114YE | SOT416 (SC-75) | Ultra small | 10 | 4.7 | 50 | 100 |
| PDTC114YM | SOT883 (SC-101) | Leadless ultra small | 10 | 4.7 | 50 | 100 |
| PDTC114YT | SOT23 (TO-236AB) | Small | 10 | 4.7 | 50 | 100 |
| PDTC114YU | SOT323 (SC-70) | Very small | 10 | 4.7 | 50 | 100 |
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | Open base | - | - | 50 | V |
| Output Current (IO) | - | - | - | 100 | mA |
| Bias Resistor R1 (input) | - | 7 | 10 | 13 | k |
| Bias Resistor Ratio R2/R1 | - | 3.7 | 4.7 | 5.7 | - |
| Collector-Base Voltage (VCBO) | Open emitter | - | - | 50 | V |
| Emitter-Base Voltage (VEBO) | Open collector | - | - | 6 | V |
| Input Voltage (VI) | Positive | - | - | +40 | V |
| Input Voltage (VI) | Negative | - | - | -6 | V |
| Peak Collector Current (ICM) | Single pulse; tp 1 ms | - | - | 100 | mA |
| Junction Temperature (Tj) | - | - | - | 150 | C |
| Ambient Temperature (Tamb) | - | -65 | - | +150 | C |
| Storage Temperature (Tstg) | - | -65 | - | +150 | C |
| DC Current Gain (hFE) | VCE = 5 V; IC = 5 mA | 100 | - | - | - |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 5 mA; IB = 0.25 mA | - | - | 100 | mV |
| Collector Capacitance (Cc) | VCB = 10 V; IE = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| Transition Frequency (fT) | VCE = 5 V; IC = 10 mA; f = 100 MHz | - | 230 | - | MHz |
2410121813_Nexperia-PDTC114YT-215_C426850.pdf
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