High Surge Capability Rectifier NH ES3G Featuring Low Leakage Current and Fast Reverse Recovery Time
Key Attributes
Model Number:
ES3G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Reverse Leakage Current (Ir):
5uA@400V
Reverse Recovery Time (trr):
35ns
Diode Configuration:
1 Independent
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
400V
Voltage - Forward(Vf@If):
1.25V@3A
Current - Rectified:
3A
Mfr. Part #:
ES3G
Package:
SMB
Product Description
Product Overview
The Niu Hang ES3A through ES3M series are surface mount super fast recovery rectifiers designed for high-frequency applications. Featuring glass passivated chip junctions, these rectifiers offer super fast reverse recovery times, low forward voltage drop for high efficiency, and low leakage current for enhanced reliability. They also provide high forward surge capability and are lead-free and RoHS compliant.
Product Attributes
- Brand: Niu Hang
- Origin: China (implied by company name and website)
- Material: Glass passivated chip junction
- Certifications: RoHS Compliant
- Marking: White band denotes cathode
Technical Specifications
| Parameter | Symbol | ES3A | ES3B | ES3D | ES3G | ES3J | ES3K | ES3M | Unit | Test Conditions |
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V | TA=25 |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V | TA=25 |
| Maximum average forward rectified current | IF(AV) | 3.0 | A | TA=125 | ||||||
| Peak forward surge current | IFSM | 100 | A | 8.3ms single half sine-wave | ||||||
| Current Squared Time Per Diode | I2t | 35 | Asec | IF= 3.0 A, t<8.3ms | ||||||
| Maximum instantaneous forward voltage | VF | 1.25 | 1.68 | 1.95 | 3.50 | - | - | - | V | IF=3.0A, TJ=25 |
| Maximum DC blocking voltage | - | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V | - |
| Maximum Reverse Recovery Time | TRR | 50~1000 | ns | IF=0.5A, IR=1.0A, IRR=0.25A | ||||||
| Typical junction capacitance | CJ | 50 | pF | VR=4V,1MHz | ||||||
| Typical thermal resistance (Junction to Ambient) | RJA | 55 | /W | Note 2 | ||||||
| Typical thermal resistance (Junction to Case) | RJC | 17 | /W | - | ||||||
| Storage temperature range | TSTG | -55 to 150 | - | |||||||
| Operating junction temperature | TJ | 150 | - | |||||||
2409300634_NH-ES3G_C7427716.pdf
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