High Current 500V N Channel MOSFET OSEN OSPF25N50 with 100A Pulsed Drain Current and TO 220F Package
Key Attributes
Model Number:
OSPF25N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
25A
RDS(on):
200mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Pd - Power Dissipation:
85W
Input Capacitance(Ciss):
3.5nF
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
OSPF25N50
Package:
TO-220F
Product Description
OSPF25N50 500V N-CHANNEL MOSFET
The OSPF25N50 is a 500V N-channel MOSFET designed for high-efficiency applications. It features fast switching speed, high input impedance, low-level drive capability, and improved dv/dt capability for enhanced ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSPF25N50
- Revision: Rev 21.2.10
- Package: TO-220F
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions | |
| VDSS | Drain-Source Voltage | 500 | V | ||
| VGS | Gate-Source Voltage-Continuous | 30 | V | ||
| ID | Drain Current-Continuous (Note 2) | 25 | A | ||
| IDM | Drain Current-Single Pulsed (Note 1) | 100 | A | ||
| PD | Power Dissipation (Note 2) | 85 | W | ||
| Tj Max. | Operating junction temperature | 150 | |||
| BVDSS | Drain-Source Breakdown Voltage (Note 1) | 500 | V | ID=250AVGS=0VTJ=25C | |
| VGS(th) | Gate Threshold Voltage | 2 | 4.0 | V | VDS=VGSID=250A |
| RDS(on) | Drain-Source On-Resistance | 0.20 | VGS=10VID=14A | ||
| IGSS | Gate-Body Leakage Current | 100 | nA | VGS=30VVDS=0 | |
| IDSS | Zero Gate Voltage Drain Current | 1 | A | VDS=500VVGS=0 | |
| gfs | Forward Transconductance | 25 | S | VDS=40VID=10A | |
| Td(on) | Turn-On Delay Time | 40 | ns | VDS=400VID=25ARG=10Note 2 | |
| Tr | Rise Time | 68 | ns | ||
| Td(off) | Turn-Off Delay Time | 88 | ns | ||
| Tf | Fall Time | 44 | ns | ||
| Qg | Total Gate Charge | 65 | nC | VDS=400V VGS=10VID=25ANote 2 | |
| Qgs | Gate-Source Charge | 12 | nC | ||
| Qgd | Gate-Drain Charge | 20 | nC | ||
| Ciss | Input Capacitance | 3500 | pF | VDS=25VVGS=0f=1MHz | |
| Coss | Output Capacitance | 220 | pF | ||
| Crss | Reverse Transfer Capacitance | 12 | pF | ||
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | 25 | A | ||
| VSD | Diode Forward On-Voltage | 1.4 | V | IS=14AVGS=0 | |
| Rth(j-c) | Thermal Resistance, Junction to Case | 1.47 | /W |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300us, duty cycle <= 2%.
2410121732_OSEN-OSPF25N50_C20607833.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
