N Channel Enhanced Shielded Gate Trench Power MOSFET NH NSH079N15D for DC DC Converters Motor Drives
Key Attributes
Model Number:
NSH079N15D
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
113A
RDS(on):
7.9mΩ@10V,20A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12.2pF@75V
Number:
1 N-channel
Pd - Power Dissipation:
273W
Input Capacitance(Ciss):
4.357nF@75V
Gate Charge(Qg):
52nC
Mfr. Part #:
NSH079N15D
Package:
TO-263
Product Description
Product Overview
The NSH079N15D is an N-Channel Enhanced Shielded Gate Trench Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It offers low RDS(ON) for high efficiency and low gate charge for high-speed switching. With high EAS for reliability, this MOSFET is 100% UIS and RG tested. It is suitable for applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and printed circuit board control. It is also noted for use in automotive electronics and UPS (Uninterruptible Power Supplies).
Product Attributes
- Brand: Niuhang (NH)
- Product Line: FF
- Model ID: NSH079N15D
- Channel Type: N-Channel
- Technology: Enhanced Shielded Gate Trench Power MOSFET
- Certifications: RoHS Compliant, Pb-Free
- Package: TO-263
- Weight: App. 1.472 Grams (0.05192 Ounce)
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | Min.@Tj | VDS | 150 | V | ||
| Continuous Drain Current | Min.@Ta | ID | 113 | A | ||
| RDS(ON) Type | @10V | RDS(ON) | 7.90 | m | ||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 113 | A | ||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 90 | A | ||
| Drain Current-Pulsed (Note 1) | TJ< 175 | IDM | 452 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 273 | W | ||
| Maximum Power Dissipation | Ta= 100 | PD | 136 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | 1.82 | W/ | ||
| Junction Temperature | TJ | -55 | 175 | |||
| Storage Temperature Range | TSTD | -55 | 175 | |||
| Avalanche Current, Single Pulse (Note 1) | L= 0.5 mH | IAS | 36 | A | ||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH, VDD= 75 V | EAS | 324 | mJ | ||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 60 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 0.55 | /W | ||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 150 | V | ||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | 0.143 | V/ | ||
| Drain-Source Leakage Current | VDS= 150 V,VGS=0V | I DSS | 1 | uA | ||
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | I GSS | 100 | nA | ||
| Forward Transconductance | ID= 20 A,VDS= 5 V | gfs | 50 | S | ||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 20 A,VGS= 10 V | R DS(ON) | 7.90 | 8.80 | m | |
| Drain-Source On Resistance | ID= 20 A,VGS= 5 V | R DS(ON) | 10.19 | 11.79 | m | |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | 0.93 | |||
| Input Capacitance | VDS= 75 V | C iss | 4357.0 | pF | ||
| Output Capacitance | VGS= 0 V | C oss | 330.0 | pF | ||
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | 12.2 | pF | ||
| Turn-On Delay Time | VDS= 75 V | t d(on) | 19.2 | ns | ||
| Turn-On Rise Time | VGS= 10 V | t r | 9.8 | ns | ||
| Turn-Off Delay Time | RL= 1.2 | t d(off) | 30.1 | ns | ||
| Turn-Off Rise Time | RG= 10 | t f | 12.6 | ns | ||
| Total Gate Charge | VDS= 75 V | Q g | 52.0 | nC | ||
| Gate-Source Charge | VGS= 10 V | Q gs | 18.7 | nC | ||
| Gate-Drain Charge | ID= 20 A | Q gd | 5.0 | nC | ||
| Drain-Source Diode Characteristics And Maximum Ratings | ||||||
| Max. Diode Forward Current | I S | 113 | A | |||
| Max. Pulsed Forward Current | I SM | 396 | A | |||
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | 0.90 | 1.26 | V | |
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | t rr | 80.0 | ns | ||
| Reverse Recovery Charge | VGS= 10 V,VDS= 75 V | Q rr | 160.0 | nC | ||
| OUTLINE DRAWINGS TO-263 OUTLINE DIMENSIONS | ||||||
| Dim. | Milimeters | Inches | ||||
| A | 9.50 - 10.50 | 0.374 - 0.413 | ||||
| B | 10.00 - 11.00 | 0.394 - 0.433 | ||||
| C | 8.50 - 9.50 | 0.335 - 0.374 | ||||
| D | 4.00 - 5.00 | 0.157 - 0.197 | ||||
| E | 1.00 - 1.60 | 0.039 - 0.063 | ||||
| F | 0.20 - 0.60 | 0.008 - 0.024 | ||||
| G | 4.45 - 5.25 | 0.175 - 0.207 | ||||
| H | 1.25 | 1.85 | 0.049 - 0.073 | |||
| J | 1.00 - 1.60 | 0.039 - 0.063 | ||||
| K | 0.60 - 1.00 | 0.024 - 0.039 | ||||
| L | 2.25 - 2.75 | 0.089 - 0.108 | ||||
| PACKING INFORMATION | ||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | |
| TO-263 | Tape Reel | 35534040 | 800 | 370x360x420 | 8000 | |
2504101957_NH-NSH079N15D_C46352553.pdf
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