Power MOSFET NITRIDE YHJ-65H225AMC 650V High Voltage Device for Industrial Power Conversion Circuits
Key Attributes
Model Number:
YHJ-65H225AMC
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
RDS(on):
215mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
1pF
Input Capacitance(Ciss):
90pF
Output Capacitance(Coss):
50pF
Pd - Power Dissipation:
63W
Gate Charge(Qg):
1.6nC
Mfr. Part #:
YHJ-65H225AMC
Package:
DFN-8(8x8)
Product Description
Product Overview
The 65H225 Series is a range of high-voltage power MOSFETs designed for industrial and consumer applications. These devices offer robust performance and are suitable for various power conversion circuits.
Product Attributes
- Brand: YHJ
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Ordering Code | Package | Marking (Product Code) | Applications | MPQ | Absolute Maximum Ratings | Electrical Characteristics |
| YHJ-65H225ADI | DFN-8*8 | 65H225ADI | Industrial | Industrial | VDSS: 650V, V(TR)DSS: 800V, VGSS: -10V ~ +15V, Ptot @TC=25C: 63W, ID @TC=25C: 8A, ID @TC=100C: 5A, IDM: 13A, TJ: -55 to +150C, TS: -55 to +150C, TSOLD: 260C | V(BL)DSS: 650V, VGS(th): 1.2-1.6-2.0V, RDS(on) @VGS=10V,ID=5A,TJ=25C: 215-250m, RDS(on) @VGS=10V,ID=5A,TJ=150C: 475m, IDSS @VGS=0V,VDS=650V,TJ=25C: 0.5-12A, IDSS @VGS=0V,VDS=650V,TJ=150C: 100A, CISS: 90pF, COSS: 50pF, CRSS: 1pF, QG: 1.6nC, QGS: 0.5nC, QOSS: 14nC, tD(on): 3.5ns, tD(off): 7ns, tRR: 0nC |
| YHJ-65H225DDI | DFN-8*8 | 65H225DDI | Industrial | Industrial | VDSS: 650V, V(TR)DSS: 800V, VGSS: -10V ~ +15V, Ptot @TC=25C: 63W, ID @TC=25C: 8A, ID @TC=100C: 5A, IDM: 13A, TJ: -55 to +150C, TS: -55 to +150C, TSOLD: 260C | V(BL)DSS: 650V, VGS(th): 1.2-1.6-2.0V, RDS(on) @VGS=10V,ID=5A,TJ=25C: 215-250m, RDS(on) @VGS=10V,ID=5A,TJ=150C: 475m, IDSS @VGS=0V,VDS=650V,TJ=25C: 0.5-12A, IDSS @VGS=0V,VDS=650V,TJ=150C: 100A, CISS: 90pF, COSS: 50pF, CRSS: 1pF, QG: 1.6nC, QGS: 0.5nC, QOSS: 14nC, tD(on): 3.5ns, tD(off): 7ns, tRR: 0nC |
| YHJ-65H225AMC | DFN-5*6 | 65H225AMC | Consumer | Consumer | VDSS: 650V, V(TR)DSS: 800V, VGSS: -10V ~ +15V, Ptot @TC=25C: 63W, ID @TC=25C: 8A, ID @TC=100C: 5A, IDM: 13A, TJ: -55 to +150C, TS: -55 to +150C, TSOLD: 260C | V(BL)DSS: 650V, VGS(th): 1.2-1.6-2.0V, RDS(on) @VGS=10V,ID=5A,TJ=25C: 215-250m, RDS(on) @VGS=10V,ID=5A,TJ=150C: 475m, IDSS @VGS=0V,VDS=650V,TJ=25C: 0.5-12A, IDSS @VGS=0V,VDS=650V,TJ=150C: 100A, CISS: 90pF, COSS: 50pF, CRSS: 1pF, QG: 1.6nC, QGS: 0.5nC, QOSS: 14nC, tD(on): 3.5ns, tD(off): 7ns, tRR: 0nC |
| YHJ-65H225DDC | DFN-8*8 | 65H225DDC | Consumer | Consumer | VDSS: 650V, V(TR)DSS: 800V, VGSS: -10V ~ +15V, Ptot @TC=25C: 63W, ID @TC=25C: 8A, ID @TC=100C: 5A, IDM: 13A, TJ: -55 to +150C, TS: -55 to +150C, TSOLD: 260C | V(BL)DSS: 650V, VGS(th): 1.2-1.6-2.0V, RDS(on) @VGS=10V,ID=5A,TJ=25C: 215-250m, RDS(on) @VGS=10V,ID=5A,TJ=150C: 475m, IDSS @VGS=0V,VDS=650V,TJ=25C: 0.5-12A, IDSS @VGS=0V,VDS=650V,TJ=150C: 100A, CISS: 90pF, COSS: 50pF, CRSS: 1pF, QG: 1.6nC, QGS: 0.5nC, QOSS: 14nC, tD(on): 3.5ns, tD(off): 7ns, tRR: 0nC |
2410122026_NITRIDE-YHJ-65H225AMC_C22458937.pdf
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