Halogen Free Lead Free P Channel Logic Level Enhancement Mode Transistor NIKO SEM PK537BA PDFN 5x6P
Key Attributes
Model Number:
PK537BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
38A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
271pF
Number:
1 P-Channel
Output Capacitance(Coss):
374pF
Input Capacitance(Ciss):
2.464nF
Pd - Power Dissipation:
20W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
PK537BA
Package:
PDFN-8(5.8x4.9)
Product Description
Product Overview
The PK537BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various applications. It features a PDFN 5x6P package and is Halogen-Free & Lead-Free.
Product Attributes
- Brand: NIKO-SEM
- Package Type: PDFN 5x6P
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameters | Symbol | Limits | Units | Test Conditions |
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS = 0V, ID = -250A |
| Gate Threshold Voltage | VGS(th) | -1.6 | V | VDS = VGS, ID = -250A |
| Gate-Body Leakage | IGSS | 100 | nA | VDS = 0V, VGS = 25V |
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS = -24V, VGS = 0V |
| Zero Gate Voltage Drain Current (at 125C) | IDSS | -10 | uA | VDS = -20V, VGS = 0V, TJ = 125 C |
| Drain-Source On-State Resistance | RDS(ON) | 8.9 - 14 | m | VGS = -4.5V, ID = -12A |
| Drain-Source On-State Resistance | RDS(ON) | 5.9 - 8 | m | VGS = -10V, ID = -12A |
| Forward Transconductance | gfs | 40 | S | VDS = -5V, ID = -12A |
| Input Capacitance | Ciss | 2464 | pF | VGS = 0V, VDS = -15V, f = 1MHz |
| Output Capacitance | Coss | 374 | pF | VGS = 0V, VDS = -15V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | 271 | pF | VGS = 0V, VDS = -15V, f = 1MHz |
| Gate Resistance | Rg | 3.9 | VGS = 0V, VDS = 0V, f = 1MHz | |
| Total Gate Charge | Qg(VGS=-10V) | 60 | nC | VDS =-15V, ID = -12A |
| Total Gate Charge | Qg(VGS=-4.5V) | 27.6 | nC | VDS =-15V, ID = -12A |
| Gate-Source Charge | Qgs | 8 | nC | VDS =-15V, ID = -12A |
| Gate-Drain Charge | Qg | 13.6 | nC | VDS =-15V, ID = -12A |
| Turn-On Delay Time | td(on) | 22 | nS | VDS = -15V, ID -12A, VGS = -10V, RGS = 6 |
| Rise Time | tr | 25 | nS | VDS = -15V, ID -12A, VGS = -10V, RGS = 6 |
| Turn-Off Delay Time | td(off) | 100 | nS | VDS = -15V, ID -12A, VGS = -10V, RGS = 6 |
| Fall Time | tf | 75 | nS | VDS = -15V, ID -12A, VGS = -10V, RGS = 6 |
| Continuous Current (Diode) | IS | -15 | A | |
| Forward Voltage (Diode) | VSD | -1.3 | V | IF = -12A, VGS = 0V |
| Reverse Recovery Time (Diode) | trr | 26 | nS | IF = -12A , dlF/dt = 100 A / S |
| Reverse Recovery Charge (Diode) | Qrr | 13 | nC | IF = -12A , dlF/dt = 100 A / S |
| Junction-to-Ambient Thermal Resistance | RJA | 54 | C / W | Device mounted on 1in2 FR-4 board with 2oz. Copper, still air environment, TA =25 C |
| Junction-to-Case Thermal Resistance | RJC | 6 | C / W |
2411220627_NIKO-SEM-PK537BA_C384601.pdf
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