86--136 6733 2386
quality NH SR340 DO15 Schottky Rectifier with Metal Silicon Junction and High Frequency Operation Capability factory
quality NH SR340 DO15 Schottky Rectifier with Metal Silicon Junction and High Frequency Operation Capability factory

NH SR340 DO15 Schottky Rectifier with Metal Silicon Junction and High Frequency Operation Capability

Key Attributes
Model Number: SR340(DO-15)
Product Custom Attributes
Reverse Leakage Current (Ir):
50uA@40V
Operating Junction Temperature Range:
-65℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
700mV@3.0A
Current - Rectified:
3A
Mfr. Part #:
SR340(DO-15)
Package:
DO-15
Product Description

Product Overview

The SR320 thru SR3200 series are Schottky Rectifiers from Niu Hang Specification Electronic Co. Ltd. These rectifiers feature a metal silicon junction with majority carrier conduction, a guard ring for overvoltage protection, and offer low power loss with high efficiency. They are designed for high current capability with ultra-low forward voltage drop and high surge capability, suitable for low voltage, high frequency inverters, DC/DC converters, free wheeling, and polarity protection applications.

Product Attributes

  • Brand: Niu Hang (NH)
  • Material: Metal silicon junction
  • Package: JEDEC DO-201AD molded plastic body
  • Terminals: Plated axial leads, solderable per MIL-STD-750, method 2026
  • Polarity: Color band denotes cathode end (White band denotes cathode)
  • Certifications: Underwriters Laboratory Flammability Classification 94V-0, RoHS 2011/65/EU compliant
  • Soldering: High temperature soldering guaranteed: 260/10 seconds at terminals

Technical Specifications

ModelVRRM (V)VRMS (V)VDC (V)IF(AV) @ 3.0A (A)VF (V) @ 3.0A (Typ.)IR @ VR=20V (uA) (Max.)CJ @ 4.0V (pF) (Typ.)RJA (/W) (Typ.)RJL (/W) (Typ.)TJ (C)TSTG (C)
SR3202014203.00.552017035--65 to +125-65 to +150
SR3303021303.00.702017035--65 to +125-65 to +150
SR3404028403.00.852017035--65 to +125-65 to +150
SR3504532453.00.852017035--65 to +125-65 to +150
SR3606042603.00.852017035--65 to +125-65 to +150
SR3808056803.00.902017035--65 to +125-65 to +150
SR3100100701003.00.952017035--65 to +125-65 to +150
SR31501501051503.00.952017035--65 to +125-65 to +150
SR32002001402003.00.952017035--65 to +125-65 to +150
ParameterSymbolUnitSR320~340SR350~360SR380~3100SR3150~3200
Peak forward surge current 8.3ms single half sine-waveIFSMA20304050

2410121819_NH-SR340-DO-15_C7428232.pdf

Related Products
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching factory
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
quality Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor factory
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.