Compact surface mount diode onsemi MURS360BT3G ideal for high frequency rectification and protection
Product Overview
The MURS360BT3G, NRVUS360VBT3G, and SURS8360BT3G are surface mount ultrafast power rectifiers ideally suited for high voltage, high frequency rectification, or as free-wheeling and protection diodes in surface mount applications where compact size and weight are critical. They feature a small, compact surface mountable package with J-bend leads, a rectangular package for automated handling, and a high temperature glass passivated junction. The NRVUS and SURS prefixes are for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability. These devices are Pb-Free and RoHS Compliant.
Product Attributes
- Brand: ON Semiconductor
- Origin: USA
- Material: Epoxy, Molded (UL 94 V-O @ 0.125 in)
- Certifications: AEC-Q101 Qualified (NRVUS and SURS prefixes), PPAP Capable (NRVUS and SURS prefixes), Pb-Free, RoHS Compliant
Technical Specifications
| Rating Symbol | Value | Unit | Description |
| VRRM, VRWM, VR | 600 | V | Peak Repetitive Reverse Voltage, Working Peak Reverse Voltage, DC Blocking Voltage |
| IF(AV) | 3.0 @ TL = 105C | A | Average Rectified Forward Current |
| IFSM | 100 | A | Non-Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) |
| TJ | -65 to +175 | C | Operating Junction Temperature |
| R JL | 14 | C/W | Thermal Resistance, Junction-to-Lead (Note 1) |
| R JA | 125 | C/W | Thermal Resistance, Junction-to-Ambient (Note 1) |
| vF (iF = 3.0 A, TJ = 25C) | 0.83 | V | Maximum Instantaneous Forward Voltage (Note 2) |
| vF (iF = 3.0 A, TJ = 150C) | 1.05 | V | Maximum Instantaneous Forward Voltage (Note 2) |
| iR (Rated DC Voltage, TJ = 25C) | 95 | A | Maximum Instantaneous Reverse Current (Note 2) |
| iR (Rated DC Voltage, TJ = 150C) | 150 | A | Maximum Instantaneous Reverse Current (Note 2) |
| trr (iF = 1.0 A, di/dt = 50 A/ s) | 75 | ns | Maximum Reverse Recovery Time |
| trr (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) | 50 | ns | Maximum Reverse Recovery Time |
| tfr (iF = 1.0 A, di/dt = 100 A/ s, Rec. to 1.0 V) | 50 | ns | Maximum Forward Recovery Time |
2410121958_onsemi-MURS360BT3G_C150048.pdf
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