Compact surface mount diode onsemi MURS360BT3G ideal for high frequency rectification and protection

Key Attributes
Model Number: MURS360BT3G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Reverse Leakage Current (Ir):
3uA@600V
Reverse Recovery Time (trr):
75ns
Operating Junction Temperature Range:
-65℃~+175℃@(Tj)
Diode Configuration:
-
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
1.25V@3A
Current - Rectified:
3A
Mfr. Part #:
MURS360BT3G
Package:
SMB
Product Description

Product Overview

The MURS360BT3G, NRVUS360VBT3G, and SURS8360BT3G are surface mount ultrafast power rectifiers ideally suited for high voltage, high frequency rectification, or as free-wheeling and protection diodes in surface mount applications where compact size and weight are critical. They feature a small, compact surface mountable package with J-bend leads, a rectangular package for automated handling, and a high temperature glass passivated junction. The NRVUS and SURS prefixes are for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability. These devices are Pb-Free and RoHS Compliant.

Product Attributes

  • Brand: ON Semiconductor
  • Origin: USA
  • Material: Epoxy, Molded (UL 94 V-O @ 0.125 in)
  • Certifications: AEC-Q101 Qualified (NRVUS and SURS prefixes), PPAP Capable (NRVUS and SURS prefixes), Pb-Free, RoHS Compliant

Technical Specifications

Rating SymbolValueUnitDescription
VRRM, VRWM, VR600VPeak Repetitive Reverse Voltage, Working Peak Reverse Voltage, DC Blocking Voltage
IF(AV)3.0 @ TL = 105CAAverage Rectified Forward Current
IFSM100ANon-Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz)
TJ-65 to +175COperating Junction Temperature
R JL14C/WThermal Resistance, Junction-to-Lead (Note 1)
R JA125C/WThermal Resistance, Junction-to-Ambient (Note 1)
vF (iF = 3.0 A, TJ = 25C)0.83VMaximum Instantaneous Forward Voltage (Note 2)
vF (iF = 3.0 A, TJ = 150C)1.05VMaximum Instantaneous Forward Voltage (Note 2)
iR (Rated DC Voltage, TJ = 25C)95AMaximum Instantaneous Reverse Current (Note 2)
iR (Rated DC Voltage, TJ = 150C)150AMaximum Instantaneous Reverse Current (Note 2)
trr (iF = 1.0 A, di/dt = 50 A/ s)75nsMaximum Reverse Recovery Time
trr (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A)50nsMaximum Reverse Recovery Time
tfr (iF = 1.0 A, di/dt = 100 A/ s, Rec. to 1.0 V)50nsMaximum Forward Recovery Time

2410121958_onsemi-MURS360BT3G_C150048.pdf

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