Compact digital transistor onsemi MUN2111T1G featuring monolithic bias resistor network for circuits
Product Overview
This series of digital transistors (BRT) integrates a single transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. This design eliminates the need for external components, simplifying circuit design, reducing board space, and lowering component count. These devices are ideal for applications requiring integrated bias resistors, offering a cost-effective and space-saving solution.
Product Attributes
- Brand: onsemi
- Certifications: AEC-Q101 Qualified (S and NSV Prefix), PPAP Capable (S and NSV Prefix), PbFree, Halogen Free/BFR Free, RoHS Compliant
- Material: Monolithic Bias Resistor Network
Technical Specifications
| Device Part Marking | Package | CollectorBase Voltage (VCBO) | CollectorEmitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | DC Current Gain (hFE) | CollectorEmitter Saturation Voltage (VCE(sat)) | Input Resistor (R1) | Resistor Ratio (R1/R2) |
| MUN2111T1G, SMUN2111T1G | SC59 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 35 - 60 | ≤ 0.25 Vdc | 7.0 - 13 kΩ | 0.8 - 1.2 |
| SMUN2111T3G | SC59 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 35 - 60 | ≤ 0.25 Vdc | 7.0 - 13 kΩ | 0.8 - 1.2 |
| MMUN2111LT1G, SMMUN2111LT1G | SOT23 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 35 - 60 | ≤ 0.25 Vdc | 7.0 - 13 kΩ | 0.8 - 1.2 |
| MMUN2111LT3G, SMMUN2111LT3G | SOT23 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 35 - 60 | ≤ 0.25 Vdc | 7.0 - 13 kΩ | 0.8 - 1.2 |
| MUN5111T1G, SMUN5111T1G | SC70/SOT323 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 35 - 60 | ≤ 0.25 Vdc | 7.0 - 13 kΩ | 0.8 - 1.2 |
| DTA114EET1G, NSVDTA114EET1G | SC75 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 35 - 60 | ≤ 0.25 Vdc | 7.0 - 13 kΩ | 0.8 - 1.2 |
| DTA114EM3T5G, NSVDTA114EM3T5G | SOT723 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 35 - 60 | ≤ 0.25 Vdc | 7.0 - 13 kΩ | 0.8 - 1.2 |
| NSBA114EF3T5G | SOT1123 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 35 - 60 | ≤ 0.25 Vdc | 7.0 - 13 kΩ | 0.8 - 1.2 |
2409302136_onsemi-MUN2111T1G_C232564.pdf
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