low forward voltage diode onsemi MBR130T1G suitable for compact systems requiring stress protection
Product Overview
The MBR130T1/D is a Schottky Power Rectifier designed for surface mount applications. It utilizes the Schottky Barrier principle for low voltage, high frequency rectification, and as free-wheeling or polarity protection diodes. Its compact size and weight make it ideal for systems where these factors are critical. The device offers an easy-to-use alternative to leadless package styles and features a guardring for stress protection and a low forward voltage.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (ON Semiconductor)
- Package: SOD-123
- Certifications: AEC-Q101 Qualified (for NRVB prefix)
- Material: Epoxy, Molded
- Marking: S3
- Pb-Free: Yes
Technical Specifications
| Rating | Symbol | Value | Unit | Conditions |
| Peak Repetitive Reverse Voltage | VRRM | 30 | V | |
| Working Peak Reverse Voltage | VRWM | 30 | V | |
| DC Blocking Voltage | VR | 30 | V | |
| Average Rectified Forward Current | IF(AV) | 1.0 | A | TL = 65C |
| Non-Repetitive Peak Surge Current | IFSM | 5.5 | A | Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz |
| Storage Temperature Range | Tstg | -65 to +125 | C | |
| Operating Junction Temperature | TJ | -65 to +125 | C | |
| Voltage Rate of Change | dv/dt | 1000 | V/s | Rated VR |
| Thermal Resistance, Junction to Ambient | RJA | 230 | C/W | Note 1 |
| Thermal Resistance, Junction to Lead | RJL | 108 | C/W | Note 1 |
| Instantaneous Forward Voltage | VF | 0.47 | V | IF = 0.1 A, TJ = 25C |
| Instantaneous Forward Voltage | VF | 0.35 | V | IF = 0.7 A, TJ = 25C |
| Instantaneous Forward Voltage | VF | 0.45 | V | IF = 1.0 A, TJ = 25C |
| Maximum Instantaneous Reverse Current | IR | 60 | A | Rated DC Voltage, TC = 25C |
| Maximum Instantaneous Reverse Current | IR | 10 | A | VR = 5 V, TC = 25C |
2410010333_onsemi-MBR130T1G_C82461.pdf
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