power transistor orisilicon OSM4N90SJ featuring gate drain source terminals for electronic circuits

Key Attributes
Model Number: OSM4N90SJ
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
4.2A
RDS(on):
1.4Ω@10V
Operating Temperature -:
-40℃~+85℃
Gate Threshold Voltage (Vgs(th)):
4V@150uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Input Capacitance(Ciss):
450pF
Output Capacitance(Coss):
50pF
Gate Charge(Qg):
10.3nC@10V
Mfr. Part #:
OSM4N90SJ
Package:
TO-252
Product Description

Product Overview

Product Attributes

  • Brand: 4N90SJ
  • Package:

Technical Specifications

ModelGateDrainSource
4N90SJ123

2504101957_orisilicon-OSM4N90SJ_C42464481.pdf

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