Power MOSFET OSEN OSPH12N65 650V N channel with improved dv dt ruggedness and high input impedance

Key Attributes
Model Number: OSPH12N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
RDS(on):
620mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
24.8pF
Pd - Power Dissipation:
155W
Output Capacitance(Coss):
205pF
Input Capacitance(Ciss):
2.1nF
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
OSPH12N65
Package:
TO-262
Product Description

OSEN OSPH12N65 650V N-CHANNEL MOSFET

The OSEN OSPH12N65 is a 650V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.

Product Attributes

  • Brand: OSEN
  • Origin: http://www.osen.net.cn

Technical Specifications

SymbolParametersRatingsUnitConditions
VDSSDrain-Source Voltage650V
VGSGate-Source Voltage-Continuous±30V
IDDrain Current-Continuous12ANote 2
IDMDrain Current-Single Plused48ANote 1
PDPower Dissipation155WNote 2
Tj Max.Operating junction temperature150
BVDSSDrain-Source Breakdown VoltageCurrent650VID=250µA, VGS=0V, TJ=25°C
VGS(th)Gate Threshold Voltage2.0 - 4.0VVDS=VGS, ID=250μA
RDS(on)Drain-Source On-Resistance0.62ΩVGS=10V, ID=6A
IGSSGate-Body Leakage Current±100nAVGS=±30V, VDS=0
IDSSZero Gate Voltage Drain Current1µAVDS=650V, VGS=0
gfsForward Transconductance12.5SVDS=15V, ID=6A
Td(on)Turn-On Delay Time18nsVDS=325V, ID=12A, RG=25Ω(Note 2)
TrRise Time20ns
Td(off)Turn-Off Delay Time45ns
TfFall Time25ns
QgTotal Gate Charge42nCVDS=325, VGS=10V, ID=12A(Note 2)
QgsGate-Source Charge8.5nC
QgdGate-Drain Charge21.5nC
CissInput Capacitance2100pFVDS=25V, VGS=0, f=1MHz
CossOutput Capacitance205pF
CrssReverse Transfer Capacitance24.8pF
ISContinuous Drain-Source Diode Forward Current12ANote 2
VSDDiode Forward On-Voltage1.4VIS=12A, VGS=0
Rth(j-c)Thermal Resistance, Junction to Case0.81°C/W

2412261755_OSEN-OSPH12N65_C42418251.pdf

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