Electronic Component PAKER SS8550 PNP Transistor SOT23 Small Outline Plastic Package RoHS Compliant
Key Attributes
Model Number:
SS8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
SS8550
Package:
SOT-23
Product Description
Product Overview
The SS8550 is a PNP epitaxial planar die construction transistor in a SOT-23 small outline plastic package. It is halogen-free and RoHS compliant, offering an industry-standard package for various electronic applications. As a complementary type, the NPN transistor SS8050 is recommended.
Product Attributes
- Brand: (Parker Microelectronics (Shenzhen) Co., Ltd.)
- Origin: Shenzhen
- Certifications: UL: 94V-0, Halogen free, RoHS compliant
- Package Type: SOT-23
- Material: Plastic-Encapsulate
Technical Specifications
| Parameters | Symbol | Test conditions | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics | ||||||
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -25 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current-Continuous | IC | -1500 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Thermal resistance From junction to ambient | RJA | 417 | /W | |||
| Electrical Characteristics | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-0.1mA, IB=0 | -25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-40V, IE=0 | -100 | nA | ||
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -100 | nA | ||
| DC current gain | hFE | VCE=-1V, IC=-100mA | 120 | 400 | ||
| VCE=-1V, IC=-800mA | 40 | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-800mA, IB=-80mA | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-800mA, IB=-80mA | -1.2 | V | ||
| Base-emitter voltage | VBE | VCE=-1V, IC=-10mA | -1 | V | ||
| Transition frequency | fT | VCE=-10V,IC=-50mA , f=30MHz | 100 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 20 | pF | ||
| hFE(1) RANK | L | H | J |
| RANGE | 120200 | 200350 | 300400 |
| SYMBOL | MILLIMETER | INCHES | ||
| MIN | MAX | MIN | MAX | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| E | 2.250 | 2.550 | 0.089 | 0.100 |
| E1 | 1.200 | 1.400 | 0.047 | 0.055 |
| e | 0.950 BSC | 0.037 BSC | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| 0 8 | 0 8 | |||
2410121936_PAKER-SS8550_C5278907.pdf
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