onsemi J109 D26Z Low On Resistance N Channel JFET for Digital Switching Applications Pb Free Device
Key Attributes
Model Number:
J109-D26Z
Product Custom Attributes
Ciss-Input Capacitance:
-
Operating Temperature:
-55℃~+150℃@(Tj)
Pd - Power Dissipation:
625mW
Drain Current (Idss):
40mA@15V
FET Type:
-
RDS(on):
12Ω
Gate-Source Breakdown Voltage (Vgss):
25V
Gate-Source Cutoff Voltage (VGS(off)):
2V@10nA
Mfr. Part #:
J109-D26Z
Package:
TO-92-3L
Product Description
Product Overview
The J109 and MMBFJ108 are N-Channel JFETs designed for digital switching applications requiring very low on-resistance. Sourced from Process 58, these devices are Pb-Free.
Product Attributes
- Brand: ON Semiconductor
- Origin: Sourced from Process 58
- Certifications: Pb-Free Devices
Technical Specifications
| Parameter | Symbol | J109 | MMBFJ108 | Unit | Notes | |
| MAXIMUM RATINGS | ||||||
| DrainGate Voltage | VDG | 25 | V | |||
| GateSource Voltage | VGS | 25 | V | |||
| Forward Gate Current | IGF | 10 | mA | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | 55 to 150 | C | |||
| THERMAL CHARACTERISTICS | ||||||
| Total Device Dissipation | PD | 625 | 350 | mW | TA = 25C | |
| Derate Above 25C | 5.0 | 2.8 | mW/C | |||
| Thermal Resistance, JunctiontoCase | R JC | 125 | C/W | Note 3 | ||
| Thermal Resistance, JunctiontoAmbient | R JA | 200 | 357 | C/W | Note 4 | |
| ELECTRICAL CHARACTERISTICS | ||||||
| GateSource Breakdown Voltage | V(BR)GSS | 25 | V | IG = 10 A, VDS = 0 | ||
| Gate Reverse Current | IGSS | 3.0 | nA | VGS = 15 V, VDS = 0, TA = 25C | ||
| Gate Reverse Current | IGSS | 200 | nA | VGS = 15 V, VDS = 0, TA = 100C | ||
| GateSource CutOff Voltage | VGS(off) | 2.0 to 6.0 | 3.0 to 10.0 | V | VDS = 15 V, ID = 10 nA | |
| ZeroGate Voltage Drain Current | IDSS | 40 | 80 | mA | VDS = 15 V, VGS = 0, Note 5 | |
| DrainSource On Resistance | rDS(on) | 8.0 | VDS 0.1 V, VGS = 0, MMBFJ108 | |||
| DrainSource On Resistance | rDS(on) | 12 | VDS 0.1 V, VGS = 0, J109 | |||
| SMALL SIGNAL CHARACTERISTICS | ||||||
| DrainGate & SourceGate On Capacitance | Cdg(on), Csg(on) | 85 | pF | VDS = 0, VGS = 0, f = 1.0 MHz | ||
| DrainGate Off Capacitance | Cdg(off) | 15 | pF | VDS = 0, VGS = 10 V, f = 1.0 MHz | ||
| SourceGate Off Capacitance | Csg(off) | 15 | pF | VDS = 0, VGS = 10 V, f = 1.0 MHz | ||
2409301133_onsemi-J109-D26Z_C900941.pdf
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