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quality Fast switching diode R O BAS516 suitable for small signal and ultra high speed switching applications factory
quality Fast switching diode R O BAS516 suitable for small signal and ultra high speed switching applications factory

Fast switching diode R O BAS516 suitable for small signal and ultra high speed switching applications

Key Attributes
Model Number: BAS516
Product Custom Attributes
Reverse Recovery Time (trr):
4ns
Pd - Power Dissipation:
150mW
Diode Configuration:
Independent
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
75V
Voltage - Forward(Vf@If):
1.25V@150mA
Reverse Leakage Current (Ir):
1uA
Current - Rectified:
250mA
Mfr. Part #:
BAS516
Package:
SOD-523
Product Description

Product Overview

The BAS516 is a fast-switching diode designed for high-speed applications. It features a low reverse leakage, high stability, and high reliability, making it suitable for small signal switching and ultra-high-speed switching applications. The device is housed in a compact SOD-523 package and is RoHS-compliant and halogen-free.

Product Attributes

  • Brand: Zhuhai Hongjiacheng Technology co., Ltd
  • Model: BAS516
  • Origin: Zhuhai
  • Certifications: RoHS-compliant, halogen-free, UL 94V-0 flammability rating
  • Case: SOD-523
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
  • Polarity: Cathode line denotes the cathode end

Technical Specifications

Parameter Symbol Unit Value Test Conditions
Non-Repetitive Peak Reverse Voltage VRM V 100
Maximum Repetitive Peak Reverse Voltage VRRM V 75
Maximum RMS Voltage VRMS V 75
Reverse Breakdown Voltage V(BR)R V 75 @IR=100A
Maximum Average Forward Rectified Current IF(AV) mA 250
Repetitive Peak Forward Current IFRM mA 500
Non-Repetitive Peak Forward Surge Current IFSM A 2.0 @tp=1.0s
Non-Repetitive Peak Forward Surge Current IFSM A 1.0 @tp=1.0s
Power Dissipation Pd mW 150
Storage Temperature Tstg -55 ~ +150
Junction Temperature Tj 150
Typical Thermal Resistance RJ-A /W 833
Maximum Instantaneous Forward Voltage VF V 0.715 IF=1mA
Maximum Instantaneous Forward Voltage VF V 0.855 IF=10mA
Maximum Instantaneous Forward Voltage VF V 1.00 IF=50mA
Maximum Instantaneous Forward Voltage VF V 1.25 IF=150mA
Reverse Leakage Current IR1 nA 30.0 VR=25V
Reverse Leakage Current IR2 A 1.0 VR=75V
Total Capacitance CT pF 1.0 VR=0V, f=1MHz
Maximum Reverse Recovery Time Trr ns 4.0 IF=IR=10mA, Irr=0.1IR, RL=100

2507101510_R-O-BAS516_C7502722.pdf

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