High current n channel mosfet osen irfp360pbf 400V with low level drive and improved dv dt capability
Key Attributes
Model Number:
IRFP360PBF
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
23A
RDS(on):
250mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
500pF
Output Capacitance(Coss):
1.2nF
Input Capacitance(Ciss):
4.5nF
Pd - Power Dissipation:
280W
Gate Charge(Qg):
180nC@10V
Mfr. Part #:
IRFP360PBF
Package:
TO-247S
Product Description
Product Overview
The IRFP360PBF is a 400V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability with high ruggedness. Its applications include high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. The TO-247S package is utilized.
Product Attributes
- Brand: OSEN
- Publication Order Number: IRFP360PBF
- Revision: 21.2.10
Technical Specifications
| Parameters | Symbol | Ratings | Unit | Conditions |
| Drain-Source Voltage | VDSS | 400 | V | |
| Gate-Source Voltage-Continuous | VGS | 30 | V | |
| Drain Current-Continuous (Note 2) | ID | 23 | A | Tc=25C |
| Drain Current-Single Pulsed (Note 1) | IDM | 92 | A | |
| Power Dissipation (Note 2) | PD | 280 | W | Tc=25C |
| Max.Operating junction temperature | Tj | 150 | ||
| Drain-Source Breakdown Voltage Current (Note 1) | BVDSS | 400 | V | ID=250A VGS=0VTJ=25C |
| Gate Threshold Voltage | VGS(th) | 2 -- 4.0 | V | VDS=VGSID=250A |
| Drain-Source On-Resistance | RDS(on) | 0.25 | VGS=10VID=10A | |
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=30VVDS=0 |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS=400VVGS=0 |
| Forward Transconductance | gfs | 35 | S | VDS=25VID=10A |
| Turn-On Delay Time | Tdon | 20 | ns | VDS=200VID=23A RG=4.5Note 2 |
| Rise Time | Tr | 80 | ns | |
| Turn-Off Delay Time | Tdoff | 100 | ns | |
| Fall Time | Tf | 70 | ns | |
| Total Gate Charge | Qg | 180 | nC | VDS=320V VGS=10V ID=23ANote 2 |
| Gate-Source Charge | Qgs | 50 | nC | |
| Gate-Drain Charge | Qgd | 80 | nC | |
| Input Capacitance | Ciss | 4500 | pF | VDS=25VVGS=0 f=1MHz |
| Output Capacitance | Coss | 1200 | pF | |
| Reverse Transfer Capacitance | Crss | 500 | pF | |
| Continuous Drain-Source Diode Forward Current (Note 2) | IS | 23 | A | |
| Diode Forward On-Voltage | VSD | 1.4 | V | IS=23AVGS=0 |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.45 | /W |
2504101957_OSEN-IRFP360PBF_C45359867.pdf
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