R plus O ES1D surface mount rectifier with solderable terminals per MIL STD 750 method 2026 standards
Key Attributes
Model Number:
ES1D
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1V@1A
Reverse Leakage Current (Ir):
2uA@200V
Current - Rectified:
1A
Mfr. Part #:
ES1D
Package:
SMA(DO-214AC)
Product Description
Product Overview
The ES1A thru ES1M series are surface mount fast recovery rectifiers designed for high-frequency rectification and freewheeling applications. These rectifiers feature a low-profile package ideal for automated placement, a glass-passivated pallet chip junction, and super fast reverse recovery times. They offer low switching losses, high efficiency, and high forward surge capability, making them suitable for use in switching mode converters and inverters for consumer, computer, automotive, and telecommunication equipment.
Product Attributes
- Brand: (Hongjiacheng)
- Origin: Zhuhai
- Case: DO-214AC(SMA)
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Cathode line denotes the cathode end
- Molding compound meets UL 94V-0 flammability rating
- RoHS-compliant, halogen-free
Technical Specifications
| Parameter | Symbol | Unit | ES1A | ES1B | ES1C | ES1D | ES1F | ES1G | ES1H | ES1J | ES1K | ES1M |
| Maximum Repetitive Peak Reverse Voltage | VRRM | V | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 |
| Maximum RMS Voltage | VRMS | V | 35 | 70 | 105 | 140 | 210 | 280 | 350 | 420 | 560 | 700 |
| Maximum DC blocking Voltage | VDC | V | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 |
| Maximum Average Forward Rectified Current @ 60Hz sinewave, Resistance load,TL (Fig.1) | IF(AV) | A | 1.0 | |||||||||
| Non-repetitive Peak Forward Surge Current @ t=8.3ms Half-sine wave | IFSM | A | 30.0 | |||||||||
| Storage temperature | Tstg | -55 ~+150 | ||||||||||
| Junction temperature | Tj | -55 ~+150 | ||||||||||
| Typical Thermal Resistance (Junction to Ambient) | RJ-A | /W | 80 | |||||||||
| Typical Thermal Resistance (Junction to Lead) | RJ-L | /W | 35 | |||||||||
| Maximum instantaneous forward voltage (IF=1.0A) | VF | V | 1.0 | 1.3 | 1.7 | |||||||
| Maximum reverse recovery time (IF=0.5A,IR=1.0A,Irr=0.25A) | Trr | ns | 35 | |||||||||
| Maximum DC reverse current at rated DC blocking voltage (VR=VDC, TA=25) | IR1 | A | 2.0 | |||||||||
| Maximum DC reverse current at rated DC blocking voltage (VR=VDC, TA=125) | IR2 | A | 200 | |||||||||
| Typical junction capacitance (4.0V DC, 1MHz) | CJ | pF | 18 | |||||||||
2506261420_R-O-ES1D_C18199158.pdf
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