Low on resistance 50V N Channel Enhancement Mode MOSFET PANJIT PJA138K R1 00001 with ESD protection

Key Attributes
Model Number: PJA138K_R1_00001
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
500mW
Input Capacitance(Ciss):
50pF
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
PJA138K_R1_00001
Package:
SOT-23
Product Description

Product Overview

The PPJA138K is a 50V N-Channel Enhancement Mode MOSFET with ESD protection. It features advanced trench process technology and is specifically designed for battery-operated systems and solid-state relay drivers for applications such as displays and memories. This MOSFET offers low on-state resistance at various gate-source voltages and drain currents, and is ESD protected up to 2KV HBM. It is lead-free in compliance with EU RoHS2.0 and uses a green molding compound (Halogen Free).

Product Attributes

  • Brand: Panjit International Inc.
  • Certifications: EU RoHS2.0 (2011/65/EU & 2015/865/EU directive), IEC61249 Std. (Halogen Free)
  • Material: Green molding compound
  • Color: Not specified
  • Origin: Not specified

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Units
Electrical CharacteristicsBVDSSVGS=0V,ID=250uA50--V
VGS(th)VDS=VGS, ID=250uA0.81.01.5V
RDS(on)VGS=10V,ID=500mA-0.961.6
RDS(on)VGS=4.5V,ID=200mA-1.252.5V
RDS(on)VGS=2.5V,ID=100mA-2.734.5V
IDSSVDS=50V,VGS=0V-0.011uA
IGSSVGS=+20V,VDS=0V-+3.0+10uA
Dynamic CharacteristicsQgVDS=25V, ID=250mA, VGS=4.5V (Note 1,2)-0.631nC
Qgs--0.2-
Qgd--0.23-
CissVDS=25V, VGS=0V, f=1.0MHZ-2550pF
Coss--9.520
Crss--2.15
Switching Characteristicstd(on)VDD=25V, ID=500mA, VGS=10V, RG=6 (Note 1,2)-2.25ns
tr--19.238
td(off)--6.212
tf--2350
Diode CharacteristicsIS---500mA
VSDIS=500mA, VGS=0V-0.861.5V
Maximum RatingsVDS---50V
VGS---+20V
ID---500mA
IDM---1200mA
PDTA=25oC--500mW
TJ,TSTG--55-150oC

2410121341_PANJIT-PJA138K-R1-00001_C2902548.pdf

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