SOT 223 Package MOSFET Panjit PJW4P06A-AU R2 000A1 with High Switching Speed and Lead Free Material
Key Attributes
Model Number:
PJW4P06A-AU_R2_000A1
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
110mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
112pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
785pF@30V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
PJW4P06A-AU_R2_000A1
Package:
SOT-223
Product Description
Product Overview
The PPJW4P06A-AU is a 60V P-Channel Enhancement Mode MOSFET in a SOT-223 package. It offers high switching speed, improved dv/dt capability, low gate charge, and low reverse transfer capacitance. This MOSFET is AEC-Q101 qualified and compliant with EU RoHS 2.0 and IEC 61249 standards, making it suitable for various electronic applications.
Product Attributes
- Brand: Panjit International Inc.
- Package: SOT-223
- Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, Green molding compound as per IEC 61249 standard
- Material: Lead free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | +20 | V | |||
| Continuous Drain Current | ID | TA=25C | -4 | A | ||
| TA=70C | -3.2 | |||||
| Pulsed Drain Current | IDM | -16 | A | |||
| Power Dissipation | PD | TA=25C | 3.1 | W | ||
| TA=70C | 2 | |||||
| Single Pulse Avalanche Energy | EAS | L=0.1mH, IAS=16A, VDD=25V, VGS=10V | 12.8 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | C | ||
| Typical Thermal Resistance - Junction to Ambient | RJA | TA=25C (Note 4,5) | 40.3 | C/W | ||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | -1 | -2.5 | V | |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10V, ID=-4A | 87 | 110 | m | |
| VGS=-4.5V, ID=-2A | 110 | 130 | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=+20V, VDS=0V | +100 | nA | ||
| Total Gate Charge | Qg | VDS=-30V, ID=-4A, VGS=-10V (Note 2,3) | 10 | nC | ||
| Gate-Source Charge | Qgs | 1.6 | ||||
| Gate-Drain Charge | Qg d | 3 | ||||
| Input Capacitance | Ciss | VDS=-30V, VGS=0V, f=1MHz | 785 | pF | ||
| Output Capacitance | Coss | 175 | ||||
| Reverse Transfer Capacitance | Crss | 112 | ||||
| Switching Time | td(on) | VDS=-30V, RL=30, VGS=-10V, RG=6.2 (Note 2,3) | 8 | ns | ||
| tr | 15 | |||||
| td(off) | 43 | |||||
| tf | 8.4 | |||||
| Drain-Source Diode Forward Current | IS | --- | -4 | A | ||
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -1 | V |
2411220622_PANJIT-PJW4P06A-AU-R2-000A1_C6252118.pdf
Related Products
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
