Surface Mount PDW ES5JC Diode with Built In Strain Relief and Soldering Guarantee at Terminals
Key Attributes
Model Number:
ES5JC
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
5uA
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
1.7V@5A
Mfr. Part #:
ES5JC
Package:
SMC
Product Description
Product Overview
The ES5xC Series Super Fast Diode is designed for surface-mounted applications, offering low reverse leakage, built-in strain relief for automated placement, and high forward surge current capability. Its SMC (DO-214AB) package is molded plastic with a passivated chip, and terminals are solder plated and solderable per MIL-STD-750. This diode is ideal for applications requiring fast switching speeds and high reliability.
Product Attributes
- Brand: PDW
- Package: SMC (DO-214AB)
- Certifications: UL Flammability Classification 94V-0
- Material: Molded plastic body over passivated chip
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Color band denotes cathode end
- Mounting Position: Any
- Soldering Guarantee: 260/10 seconds at terminals
Technical Specifications
| Parameter | Symbol | ES5AC | ES5BC | ES5CC | ES5DC | ES5EC | ES5GC | ES5JC | Unit |
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 150 | 200 | 300 | 400 | 600 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 105 | 140 | 210 | 280 | 420 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 150 | 200 | 300 | 400 | 600 | V |
| DC Peak forward surge current 8.3ms single half sine-wave superimposed on rated load | IAV | 50 | 100 | 150 | 200 | 300 | 400 | 600 | A |
| Peak forward surge current | IFSM | 150 | 150 | 150 | 150 | 150 | 150 | 150 | A |
| Maximum instantaneous forward voltage at 5A | VF | 0.95 | 0.95 | 0.95 | 0.95 | 0.95 | 0.95 | 0.95 | V |
| Maximum DC reverse current at rated DC blocking voltage TA=25 | IR | 5 | 5 | 5 | 5 | 5 | 5 | 5 | uA |
| Maximum DC reverse current at rated DC blocking voltage TA=100 | IR | 100 | 100 | 100 | 100 | 100 | 100 | 100 | uA |
| Maximum reverse recovery time (NOTE 1) | trr | 35 | 35 | 35 | 35 | 35 | 35 | 35 | ns |
| Typical junction capacitance (NOTE 2) | CJ | 75 | 75 | 75 | 75 | 75 | 75 | 75 | pF |
| Typical Thermal Resistance Junction to Ambient (NOTE3) | RJA | 55 | 55 | 55 | 55 | 55 | 55 | 55 | /W |
| Typical Thermal Resistance Junction to Lead (NOTE3) | RJL | 15 | 15 | 15 | 15 | 15 | 15 | 15 | /W |
| Operating Temperature Range | TJ | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | |
| Storage Temperature Range | TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 |
2506301650_PDW-ES5JC_C49247310.pdf
Related Products
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
