AECQ101 Qualified PANJIT BC807-40W-AU R1 000A1 Transistor with High Current Gain and RoHS 2.0 Compliance

Key Attributes
Model Number: BC807-40W-AU_R1_000A1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC807-40W-AU_R1_000A1
Package:
SOT-323
Product Description

Product Overview

The BC807W-AU series are Silicon PNP Epitaxial general purpose transistors designed for amplifier applications. They offer excellent DC current gain characteristics and are AEC-Q101 qualified. These transistors are lead-free, compliant with EU RoHS 2.0, and use a green molding compound as per IEC 61249 standard. Their NPN complement is the BC817W-AU series.

Product Attributes

  • Brand: Panjit International Inc.
  • Material: Silicon PNP Epitaxial
  • Color: Green molding compound
  • Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant

Technical Specifications

Part NumberCollector-Base Voltage (VCBO)Collector-Emitter Voltage (VCEO)Emitter-Base Voltage (VEBO)Collector Current (DC) (IC)Total Power Dissipation (PTOT)DC Current Gain (hFE) (VCE=-1V, IC=-100mA)Collector-Emitter Saturation Voltage (VCE(SAT)) (IC=-500mA, IB=-50mA)Base-Emitter Turn-on voltage (VBE(on)) (IC=-500mA, VCE=-1V)Transition Frequency (fT) (IC=-10mA, VCE=-5V)Collector Output Capacitance (COB) (VCB=-10V, f=1MHz)
PBC807-16W-AU / BC807-25W-AU / BC807-40W-AU-50 V-45 V-5 V-500 mA300 mW16W: 100-250
25W: 160-400
40W: 250-600
-0.7 V-1.2 V100 MHz7 pF

2410121326_PANJIT-BC807-40W-AU-R1-000A1_C2932943.pdf

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