P Channel Enhancement Mode MOSFET PJSEMI PJM2307PSA designed for PWM applications and load switching
Key Attributes
Model Number:
PJM2307PSA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.7A
RDS(on):
88mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
51pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
900mW
Input Capacitance(Ciss):
340pF@15V
Gate Charge(Qg):
6.2nC@4.5V
Mfr. Part #:
PJM2307PSA
Package:
SOT-23
Product Description
Product Overview
The PJM2307PSA is a P-Channel Enhancement Mode Power MOSFET designed for various power management applications. It features low gate charge and RDS(on), low reverse transfer capacitances, and is suitable for PWM applications and load switching. Its robust design ensures efficient power management and reliable performance.
Product Attributes
- Brand: PingJingSemi
- Package: SOT-23
- Marking Code: R7
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | VDS=VGS,ID=-250A | 1 | -- | 3 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V,ID=-3.5A | -- | 73 | 88 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V,ID=-2.5A | -- | 110 | 138 | m |
| Forward Transconductance | gFS | VDS=-10V,ID=-3.5A | -- | 7 | -- | S |
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | -- | 340 | -- | pF |
| Output Capacitance | Coss | VDS=-15V,VGS=0V,f=1MHz | -- | 67 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V,f=1MHz | -- | 51 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-1A,RL=15,VGS=-4.5V,RGEN=1 | -- | 40 | 60 | nS |
| Turn-on Rise Time | tr | VDD=-15V, ID=-1A,RL=15,VGS=-4.5V,RGEN=1 | -- | 40 | 60 | nS |
| Turn-off Delay Time | td(off) | VDD=-15V, ID=-1A,RL=15,VGS=-4.5V,RGEN=1 | -- | 20 | 40 | nS |
| Turn-off Fall Time | tf | VDD=-15V, ID=-1A,RL=15,VGS=-4.5V,RGEN=1 | -- | 17 | 30 | nS |
| Total Gate Charge | Qg | VDS=-15V,ID=-2.5A, VGS=-4.5V | -- | 4.1 | 6.2 | nC |
| Gate-Source Charge | Qgs | VDS=-15V,ID=-2.5A, VGS=-4.5V | -- | 1.3 | -- | nC |
| Gate-Drain Charge | Qg | VDS=-15V,ID=-2.5A, VGS=-4.5V | -- | 1.8 | -- | nC |
| Diode Forward Voltage | -VSD | VGS=0V,IS=-2.7A | -- | 0.8 | 1.2 | V |
| Diode Forward Current | -IS | VGS=0V | -- | -- | 2.7 | A |
2412311540_PJSEMI-PJM2307PSA_C42431773.pdf
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