High Speed Power Switching MOSFET RENESAS 2SK2225-E Silicon N Channel with TO 3PFM Package Design
Key Attributes
Model Number:
2SK2225-E
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12Ω@15V
Gate Threshold Voltage (Vgs(th)):
4V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Output Capacitance(Coss):
125pF
Input Capacitance(Ciss):
66pF
Pd - Power Dissipation:
50W
Mfr. Part #:
2SK2225-E
Package:
TO-3PFM
Product Description
2SK2225 Silicon N Channel MOS FET
The 2SK2225 is a Silicon N Channel MOS FET designed for high-speed power switching applications. It features a high breakdown voltage (VDSS = 1500 V), fast switching speeds, and low drive current, making it suitable for switching regulators and DC-DC converters. It offers no secondary breakdown and is available in a TO-3PFM package.
Product Attributes
- Brand: RENESAS
- Package Code: PRSS0003ZA-A
- Package Name: TO-3PFM
Technical Specifications
| Item | Symbol | Ratings | Unit | Test conditions | |
| Absolute Maximum Ratings | VDSS | 1500 | V | ||
| VGSS | 20 | V | |||
| ID | 2 | A | |||
| ID(pulse)*1 | 7 | A | PW 10 s, duty cycle 1 % | ||
| IDR | 2 | A | |||
| Pch*2 | 50 | W | Value at Tc = 25C | ||
| Tch | 150 | C | |||
| Tstg | 55 to +150 | C | |||
| Electrical Characteristics | V(BR)DSS | 1500 | V | ID = 10 mA, VGS = 0 | |
| IGSS | 1 | A | VGS = 20 V, VDS = 0 | ||
| IDSS | 500 | A | VDS =1200 V, VGS = 0 | ||
| VGS(off) | 2.0 | 4.0 | V | ID = 1 mA, VDS = 10 V | |
| RDS(on) | 9 | 12 | ID = 1 A, VGS = 15 V*3 | ||
| |yfs| | 0.45 | 0.75 | S | ID = 1 A, VDS = 20 V*3 | |
| Ciss | 990 | pF | VDS = 10 V, VGS = 0, f = 1 MHz | ||
| Coss | 125 | pF | |||
| Crss | 60 | pF | |||
| td(on) | 17 | ns | ID = 1 A, VGS = 10 V, RL = 30 | ||
| tr | 50 | ns | |||
| td(off) | 150 | ns | |||
| tf | 50 | ns | |||
| VDF | 0.9 | V | IF = 2 A, VGS = 0 | ||
| trr | 1750 | ns | IF = 20 A, VGS = 0, diF / dt = 100 A / s |
1810201908_RENESAS-2SK2225-E_C37357.pdf
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