Low Gate Threshold Voltage 100V N Channel MOSFET PANJIT PJW5N10 with RoHS 2 Compliant Green Compound
Key Attributes
Model Number:
PJW5N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
135mΩ@6V
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Input Capacitance(Ciss):
707pF
Output Capacitance(Coss):
40pF
Pd - Power Dissipation:
8W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
PJW5N10
Package:
SOT-223
Product Description
Product Overview
The PPJW5N10 is a 100V N-Channel Enhancement Mode MOSFET designed for various applications. It features low on-resistance, low input capacitance, and is compliant with EU RoHS 2.0 and uses a green molding compound. This MOSFET is suitable for applications requiring efficient power handling and switching.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2.0, IEC 61249
- Material: Green molding compound
- Packaging: SOT-223
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source On-State Resistance | RDS(on) | VGS@10V,ID@2.5A | - | 110 | 130 | m |
| VGS@6V,ID@1A | - | 120 | 135 | m | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 2.0 | 2.76 | 3.5 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | 0.01 | 1.0 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+20V,VDS=0V | - | +20 | +100 | nA |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 100 | - | - | V |
| Continuous Drain Current (TC=25C) | - | - | 5 | A | ||
| Continuous Drain Current (TC=100C) | - | - | 3.1 | A | ||
| Pulsed Drain Current (TC=25C) | - | - | 10 | A | ||
| Power Dissipation (TC=25C) | - | - | 8 | W | ||
| Power Dissipation (TC=100C) | - | - | 3.2 | W | ||
| Continuous Drain Current (TA=25C) | - | - | 3.1 | A | ||
| Continuous Drain Current (TA=70C) | - | - | 2.5 | A | ||
| Power Dissipation (TA=25C) | - | - | 3.1 | W | ||
| Power Dissipation (TA=70C) | - | - | 2 | W | ||
| Operating Junction and Storage Temperature Range | -55 | - | 150 | C | ||
| Typical Thermal Resistance | RJC | Junction to Case | - | 15.6 | - | C/W |
| RJA | Junction to Ambient | - | 40.3 | - | C/W | |
| Dynamic Characteristics | Qg | VDS=37.5V, ID=5A, VGS=10V | - | 12 | - | nC |
| Qgs | - | - | 3.1 | - | ||
| Qgd | - | - | 2.2 | - | ||
| Capacitance | Ciss | VDS=30V, VGS=0V, f=1.0MHz | - | 707 | - | pF |
| Coss | - | - | 40 | - | ||
| Crss | - | - | 16 | - | ||
| Switching Times | td(on) | VDS=37.5V,RL=7.5, VGS=10V, RG=3 | - | 6 | - | ns |
| tr | - | - | 27 | - | ||
| td(off) | - | - | 15 | - | ||
| tf | - | - | 7 | - | ||
| Diode Forward Voltage | VSD | IS=1A,VGS=0V | - | 0.78 | 1 | V |
2410121321_PANJIT-PJW5N10_C2992476.pdf
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