Low frequency power amplifier transistor ROHM 2SD2153T100V with high gain and low saturation voltage

Key Attributes
Model Number: 2SD2153T100V
Product Custom Attributes
Current - Collector Cutoff:
500nA
Pd - Power Dissipation:
2W
Transition Frequency(fT):
110MHz
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
2SD2153T100V
Package:
TO-243AA
Product Description

Product Overview

The 2SD2153 is a high-gain amplifier transistor designed for low-frequency power amplification. It features low saturation voltage and high DC current gain, making it suitable for various amplification applications.

Product Attributes

  • Brand: ROHM
  • Package: SOT-89 (MPT3)
  • Marking: DN

Technical Specifications

ParameterSymbolConditionsValuesUnit
Collector-base voltageVCBO30V
Collector-emitter voltageVCEO25V
Emitter-base voltageVEBO6V
Collector currentIC2A
Collector current (peak)ICP*1Single Pulse, Pw=10ms3A
Power dissipationPD*2Each terminal mounted on a reference land.0.5W
Power dissipationPD*3Mounted on a 40x40x0.7mm ceramic board.2.0W
Junction temperatureTj150
Range of storage temperatureTstg-55 to +150
Collector-base breakdown voltageBVCBOIC = 50A30V
Collector-emitter breakdown voltageBVCEOIC = 1mA25V
Emitter-base breakdown voltageBVEBOIE = 50A6V
Collector cut-off currentICBOVCB = 20V-500 nA
Emitter cut-off currentIEBOVEB = 5V-500 nA
Collector-emitter saturation voltageVCE(sat)*4IC = 1A, IB = 20mA-500 mV
DC current gainhFE*4VCE = 6V, IC = 0.5A560 - 2700-
Transition frequencyfTVCE = 10V, IE = -10mA, f = 100MHz-110 MHz
Output capacitanceCobVCB = 10V, IE = 0A, f = 1MHz-22 pF

*1 Single Pulse, Pw=10ms
*2 Each terminal mounted on a reference land.
*3 Mounted on a 40x40x0.7mm ceramic board.
*4 Pulsed
hFE values are classified as follows: rank U (560-1200), V (820-1800), W (1200-2700)


2312212031_ROHM-2SD2153T100V_C6667951.pdf

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