Durable PJSEMI PJM20N60TE N Channel Power MOSFET designed for PWM and load switching power management
Key Attributes
Model Number:
PJM20N60TE
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
33mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-channel
Output Capacitance(Coss):
56pF
Input Capacitance(Ciss):
1.18nF
Pd - Power Dissipation:
27.7W
Gate Charge(Qg):
20.3nC@10V
Mfr. Part #:
PJM20N60TE
Package:
TO-252
Product Description
Product Overview
The PJM20N60TE is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management applications. Featuring advanced trench technology, it offers excellent performance with low on-resistance and high avalanche energy. This RoHS and Reach compliant component is halogen and antimony free, making it suitable for load switching and PWM applications.
Product Attributes
- Brand: Pingjingsemi
- Certifications: RoHS, Reach Compliant
- Material: Halogen and Antimony Free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=10A | -- | 26 | 33 | m |
| VGS=4.5V,ID=5A | -- | 31 | 45 | m | ||
| Forward Transconductance | gFS | VDS=5V,ID=3A | -- | 9 | -- | S |
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 1180 | -- | pF |
| Output Capacitance | Coss | -- | -- | 56 | -- | pF |
| Reverse Transfer Capacitance | Crss | -- | -- | 50 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 1.6 | -- | |
| Total Gate Charge | Qg | VDS=30V, ID=10A, VGS=10V | -- | 20.3 | -- | nC |
| Gate-Source Charge | Qgs | -- | -- | 3.7 | -- | nC |
| Gate-Drain Charge | Qgd | -- | -- | 5.3 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RGEN=1.8 | -- | 7.6 | -- | nS |
| Turn-on Rise Time | tr | -- | -- | 20 | -- | nS |
| Turn-off Delay Time | td(off) | -- | -- | 15 | -- | nS |
| Turn-off Fall Time | tf | -- | -- | 24 | -- | nS |
| Diode Forward Voltage | VSD | VGS=0V,IS=20A | -- | -- | 1.2 | V |
2407301136_PJSEMI-PJM20N60TE_C36493746.pdf
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