q series 600 volt 5 amp diode power integrations lqa05tc600 designed for motor drives and inverters

Key Attributes
Model Number: LQA05TC600
Product Custom Attributes
Reverse Leakage Current (Ir):
15uA@600V
Reverse Recovery Time (trr):
15ns
Voltage - DC Reverse (Vr) (Max):
600V
Operating Junction Temperature Range:
-
Voltage - Forward(Vf@If):
3.14V@5A
Current - Rectified:
5A
Mfr. Part #:
LQA05TC600
Package:
TO-220AC
Product Description

Product Overview

The LQA05TC600 is a 600 V, 5 A Q-Series PFC Diode from the Qspeed Family. It offers the lowest QRR of any 600 V silicon diode, leading to increased efficiency, reduced EMI, and elimination of snubbers. This device is suitable for Power Factor Correction (PFC) boost diodes, motor drive circuits, and DC-AC inverters. Key features include low QRR, low IRRM, low tRR, high dIF/dt capability, and soft recovery, providing benefits such as increased efficiency, elimination of snubber circuits, reduced EMI filter component size and count, and enabling extremely fast switching.

Product Attributes

  • Brand: Qspeed
  • Family: Q-Series
  • Package: TO-220AC
  • Certifications: RoHS Compliant
  • Material: Lead-free plating and Green mold compound; Halogen free per IEC 61249-2-21

Technical Specifications

ParameterConditionsRatingUnits
Peak repetitive reverse voltage (VRRM)600V
Average forward current (IF(AVG))TJ = 150 C, TC = 115 C5A
Non-repetitive peak surge current (IFSM)60 Hz, cycle50A
Non-repetitive peak surge current (IFSM) cycle of t = 28 s Sinusoid, TC = 25 C350A
Maximum junction temperature (TJ(MAX))150C
Storage temperature (TSTG)-55 to 150C
Lead soldering temperatureLeads at 1.6 mm from case, 10 sec300C
Isolation voltage (VISOL)(leads-to-tab) DC, + to tab2500V
Power dissipation (PD)TC = 25 C43.1W
Junction to ambient thermal resistance (RJA)TO-22062C/W
Junction to case thermal resistance (RJC)TO-2202.9C/W
Reverse current (IR)VR = 600 V, TJ = 25 C15A
Reverse current (IR)VR = 600 V, TJ = 125 C0.4mA
Forward voltage (VF)IF = 5 A, TJ = 25 C3.14V
Forward voltage (VF)IF = 5 A, TJ = 150 C2.28V
Junction capacitance (CJ)VR = 10 V, 1 MHz21pF
Reverse recovery time (tRR)dI/dt = 200 A/s, VR = 400 V, IF = 5 A, TJ = 25 C15ns
Reverse recovery time (tRR)dI/dt = 200 A/s, VR = 400 V, IF = 5 A, TJ = 125 C24ns
Reverse recovery charge (QRR)dI/dt = 200 A/s, VR = 400 V, IF = 5 A, TJ = 25 C10nC
Reverse recovery charge (QRR)dI/dt = 200 A/s, VR = 400 V, IF = 5 A, TJ = 125 C27nC
Maximum reverse recovery current (IRRM)dI/dt = 200 A/s, VR = 400 V, IF = 5 A, TJ = 25 C1.3A
Maximum reverse recovery current (IRRM)dI/dt = 200 A/s, VR = 400 V, IF = 5 A, TJ = 125 C1.65A
Softness factor (tb/ta)dI/dt = 200 A/s, VR = 400 V, IF = 5 A, TJ = 25 C1
Softness factor (tb/ta)dI/dt = 200 A/s, VR = 400 V, IF = 5 A, TJ = 125 C1.4

2506301526_POWER-INTEGRATIONS-LQA05TC600_C568323.pdf

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