R O BAS21S fast switching diode with 50 nanosecond recovery time and 200 milliamp RMS voltage rating
Key Attributes
Model Number:
BAS21S
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Leakage Current (Ir):
100nA
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21S
Package:
SOT-23
Product Description
Product Overview
The BAS21 THRU BAS21S are fast switching diodes designed for general-purpose switching applications. They offer high stability and reliability with a fast switching speed (TRR < 50nS) and a power dissipation of 225mW. These diodes meet MSL level 1 requirements and are RoHS-compliant and halogen-free.
Product Attributes
- Brand: (Hongjiacheng)
- Origin: Zhuhai Hongjiacheng Technology co., Ltd
- Certifications: RoHS-compliant, halogen-free, UL 94V-0 flammability rating
- Case: SOT-23
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Cathode line denotes the cathode end
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Type | Max |
| Maximum repetitive peak reverse voltage | VRRM | V | 250 | |||
| Maximum RMS Voltage | VRMS | V | 200 | |||
| Reverse Breakdown voltage | V(BR)R | @IR=100A | V | 250 | ||
| Maximum Average Forward Rectified Current | IF(AV) | mA | 200 | |||
| Forward continuous current | IFM | mA | 400 | |||
| Repetitive peak forward current | IFRM | mA | 625 | |||
| Non-Repetitive Peak forward surge current | IFSM | @tp=1.0ms | A | 2.5 | ||
| Power Dissipation | Pd | mW | 225 | |||
| Storage temperature | Tstg | -55 | +150 | |||
| Junction temperature | Tj | -55 | +150 | |||
| Typical thermal resistance | RJ-A | /W | 555 | |||
| Maximum instantaneous forward voltage | VF1 | IF=100mA | V | 1.0 | ||
| Maximum instantaneous forward voltage | VF2 | IF=200mA | V | 1.25 | ||
| Reverse Leakage Current | IR | VR=200V | A | 0.1 | ||
| Total capacitance | CT | VR=0V,f=1MHz | pF | 5.0 | ||
| Maximum reverse recovery time | Trr | IF=IR=30mA,Irr=0.1IR, RL=100 | ns | 5.0 |
2506261420_R-O-BAS21S_C7502726.pdf
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