R plus O BAT60B Schottky rectifier with cathode line polarity and RoHS compliant halogen free design
Key Attributes
Model Number:
BAT60B
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
5A
Reverse Leakage Current (Ir):
25uA
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
10V
Voltage - Forward(Vf@If):
600mV@1A
Current - Rectified:
3A
Mfr. Part #:
BAT60B
Package:
SOD-323
Product Description
Product Overview
The BAT60B is a surface mount Schottky barrier rectifier designed for low voltage, high frequency circuit signals. It features a low turn-on voltage, fast switching speed, and meets MSL level 1 per J-STD-020 with a maximum peak of 260. This rectifier is housed in a SOD-323 package and is RoHS-compliant and halogen-free.
Product Attributes
- Brand: (Hongjiacheng)
- Origin: Zhuhai
- Case: SOD-323
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Cathode line denotes the cathode end
- Molding compound meets UL 94V-0 flammability rating
- Certifications: RoHS-compliant, halogen-free
Technical Specifications
| Parameter | Symbol | Unit | Value | Test Conditions |
|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | V | 10 | |
| Maximum RMS voltage | VRMS | V | 10 | |
| Maximum DC blocking voltage | VDC | V | 10 | |
| Maximum average forward rectified current | IF(AV) | A | 3.0 | (Ta=25) |
| Non-repetitive Peak Forward Surge Current @ t=8.3ms Half-sine wave | IFSM | A | 5.0 | |
| Power Dissipation | PD | mW | 350 | (Ta=25) |
| Junction Temperature | Tj | 125 | ||
| Storage temperature range | TSTG | -65 ~+150 | ||
| Typical thermal resistance | RJA | /W | 286 | |
| Maximum forward voltage | VF | V | 0.33 - 0.38 | IF=100mA, (Ta=25) |
| Maximum forward voltage | VF | V | 0.41 - 0.50 | IF=500mA, (Ta=25) |
| Maximum forward voltage | VF | V | 0.45 - 0.60 | IF=1000mA, (Ta=25) |
| Maximum reverse current | IR | A | - - 15 | VR=5V, (Ta=25) |
| Maximum reverse current | IR | A | - - 25 | VR=8V, (Ta=25) |
| Capacitance between terminals | CT | pF | - 30 - | VR = 5.0V, f = 1MHz, (Ta=25) |
2506261420_R-O-BAT60B_C7502695.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
