ROHM DTC114TUAT106 digital transistor NPN type featuring built in bias resistors for simplified circuit design
Key Attributes
Model Number:
DTC114TUAT106
Product Custom Attributes
Input Resistor:
10kΩ
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC114TUAT106
Package:
SOT-323
Product Description
Product Overview
The DTC114T series is a line of NPN digital transistors featuring built-in bias resistors, simplifying circuit design by eliminating the need for external input resistors. These transistors are ideal for inverter, interface, and driver applications, offering easy circuit design by only requiring the setting of on/off conditions. Complementary PNP types are available in the DTA114T series.
Product Attributes
- Brand: ROHM
Technical Specifications
| Model | Package | Package Size | VCEO (V) | IC (mA) | R1 (k) | Power Dissipation (mW) | Marking |
|---|---|---|---|---|---|---|---|
| DTC114TM | SOT-723 | 1212 | 50 | 100 | 10 | 150*1 | 04 |
| DTC114TEB | SOT-416FL | 1616 | 50 | 100 | 10 | 150*1 | 04 |
| DTC114TE | SOT-416 | 1616 | 50 | 100 | 10 | 150*1 | 04 |
| DTC114TUB | SOT-323FL | 2021 | 50 | 100 | 10 | 200*1 | 04 |
| DTC114TUA | SOT-323 | 2021 | 50 | 100 | 10 | 200*1 | 04 |
| DTC114TKA | SOT-346 | 2928 | 50 | 100 | 10 | 200*1 | 04 |
*1 Each terminal mounted on a reference land.
Electrical Characteristics (Ta = 25C)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | IC = 50A | 50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = 50A | 5 | - | - | V |
| Collector cut-off current | ICBO | VCB = 50V | - | - | 500 | nA |
| Emitter cut-off current | IEBO | VEB = 4V | - | - | 500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = 10mA, IB = 1mA | - | - | 300 | mV |
| DC current gain | hFE | VCE = 5V, IC = 1mA | 100 | 250 | 600 | - |
| Input resistance | R1 | - | 7 | 10 | 13 | k |
| Transition frequency | fT*2 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
*2 Characteristics of built-in transistor
Absolute Maximum Ratings (Ta = 25C)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-base voltage | VCBO | 50 | V |
| Collector-emitter voltage | VCEO | 50 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 100 | mA |
| Junction temperature | Tj | 150 | |
| Range of storage temperature | Tstg | -55 to +150 |
2007151836_ROHM-DTC114TUAT106_C703612.pdf
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