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quality Compact dual digital transistor ROHM UMG2NTR in sot353 package designed for mounting cost reduction factory
quality Compact dual digital transistor ROHM UMG2NTR in sot353 package designed for mounting cost reduction factory

Compact dual digital transistor ROHM UMG2NTR in sot353 package designed for mounting cost reduction

Key Attributes
Model Number: UMG2NTR
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
61.1kΩ
Resistor Ratio:
1.2
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMG2NTR
Package:
SOT-353-5
Product Description

Product Overview

The EMG2, UMG2N, and FMG2A are dual digital transistors designed for emitter common configurations. These devices integrate two DTC144E chips within a single SOT-553 (EMT5), SOT-353 (UMT5), or SOT-25 (SMT5) package, offering significant reductions in mounting cost and board area. They are suitable for applications such as inverters, interfaces, and drivers.

Product Attributes

  • Brand: ROHM
  • RoHS: Yes

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
EMG2 SOT-553 (EMT5) 1616 T2R 180 8 8000 G2
UMG2N SOT-353 (UMT5) 2021 TR 180 8 3000 G2
FMG2A SOT-25 (SMT5) 2928 T148 180 8 3000 G2
Parameter Symbol Values Unit
Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common>
Supply voltage VCC 50 V
Input voltage VIN -10 to 40 V
Output current IO 30 mA
Collector current IC(MAX)*1 100 mA
Power dissipation (EMG2) PD*2*3 150 mW
Power dissipation (UMG2N) PD*2*3 150 mW
Power dissipation (FMG2A) PD*2*4 300 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common>
Input voltage (VI(off)) VI(off) - 0.5 V
Input voltage (VI(on)) VI(on) 3.0 - - V
Output voltage (VO(on)) VO(on) - 100 300 mV
Input current II - 180 A
Output current (IO(off)) IO(off) - 500 n A
DC current gain GI 68 - - -
Input resistance R1 R1 - 32.9 47 61.1 k
Resistance ratio R2/R1 R2/R1 - 0.8 1.0 1.2 -
Transition frequency fT*1 fT*1 - 250 - MHz

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.


2409291004_ROHM-UMG2NTR_C253543.pdf

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