Silicon Diffused P N Junction Pin Diode ROHM RN731VTE-17 with Low Forward Resistance and Capacitance
Key Attributes
Model Number:
RN731VTE-17
Product Custom Attributes
Diode Configuration:
Independent
Current - Rectified:
50mA
Voltage - DC Reverse(Vr):
50V
Voltage - Forward(Vf@If):
1V@50mA
Mfr. Part #:
RN731VTE-17
Package:
SOD-323F
Product Description
Product Overview
The RN731V is a series of SILICON DIFFUSED p-n JUNCTION PIN Diodes featuring high reliability, a small mold type, low forward resistance (rF), and low capacitance (Ct). These diodes are designed for applications such as auto gain control circuits.
Product Attributes
- Brand: ROHM
- Material: SILICON DIFFUSED p-n JUNCTION
- Origin: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Reverse voltage | VR | 50 | V | |||
| Forward current | IF | 50 | mA | |||
| Junction temperature | Tj | 125 | ||||
| Storage temperature | Tstg | -55 | 125 | |||
| Forward voltage | VF | IF=50mA | 1.0 | V | ||
| Reverse current | IR | VR=50V | 100 | nA | ||
| Capacitance between terminals | Ct | VR=35V f=1.0MHz | 0.4 | pF | ||
| High frequency forward resistance | rF | IF=10mA f=100MHz | 7.0 |
1805291541_ROHM-RN731VTE-17_C162063.pdf
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