PMDU Package ROHM RB160M-60TR Schottky Diode with Low Reverse Current and Silicon Epitaxial Planar
Key Attributes
Model Number:
RB160M-60TR
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Voltage - DC Reverse (Vr) (Max):
60V
Reverse Leakage Current (Ir):
50uA@60V
Voltage - Forward(Vf@If):
550mV@1A
Current - Rectified:
1A
Mfr. Part #:
RB160M-60TR
Package:
SOD-123F
Product Description
Product Overview
The ROHM RB160M-60 is a Schottky barrier diode designed for general rectification. It features a small power mold type (PMDU), low reverse current (IR), and high reliability, constructed from silicon epitaxial planar technology.
Product Attributes
- Brand: ROHM
- Model: RB160M-60
- Construction: Silicon epitaxial planar
- Package: PMDU (JEDEC: SOD-123)
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Reverse voltage (repetitive) | 60 | V | |||
| Reverse voltage (DC) | 60 | V | |||
| Average rectified forward current | (*1)Mounting on epoxi board. 180Half sine wave | 1.2 | A | ||
| Forward current surge peak (60Hz1cyc) | 30 | A | |||
| Junction temperature | 150 | ℃ | |||
| Storage temperature | -40 | +150 | ℃ | ||
| Forward voltage | IF=1.0A | 0.49 | 0.55 | V | |
| Reverse current | VR=60V | 7.0 | 50 | μA | |
| Capacitance between terminals | VR=10V , f=1MHz | 40 | pF |
1809231820_ROHM-RB160M-60TR_C84992.pdf
Related Products
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
