Dual transistor ROHM EMX1T2R compact design suitable for small signal amplification applications

Key Attributes
Model Number: EMX1T2R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
180MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
EMX1T2R
Package:
SOT-563
Product Description

EMX1 / UMX1N / IMX1 General Purpose Transistors

The EMX1, UMX1N, and IMX1 are general-purpose dual transistors designed for small-signal amplification. They feature two independent transistor chips housed in compact SOT-563, SOT-363, or SOT-457 packages, offering significant advantages in terms of reduced mounting cost and board space. These devices are compatible with automatic mounting machines, ensuring efficient production. The independent transistor elements prevent interference, making them ideal for various amplification applications.

Product Attributes

  • Brand: ROHM
  • Product Type: General purpose transistor (dual transistors)
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Part No.PackagePackage SizeTaping CodeReel Size (mm)Tape Width (mm)Basic Ordering Unit (pcs)MarkingVCEO (V)IC (mA)PD (mW/Total)BVCBO (V)BVCEO (V)BVEBO (V)ICBO (nA)IEBO (nA)VCE(sat) (mV)hFEfT (MHz)Cob (pF)
EMX1SOT-563 (EMT6)1616T2R18088000X150150150*1*260507100100400120-5601802.0-3.5
UMX1NSOT-363 (UMT6)2021TN18083000X150150150*1*260507100100400120-5601802.0-3.5
IMX1SOT-457 (SMT6)2928T11018083000X150150300*1*360507100100400120-5601802.0-3.5

*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.


1808280341_ROHM-EMX1T2R_C253326.pdf

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