Low VCEsat PNP middle power transistor ROHM 2SAR554RTL designed for driver applications and switching

Key Attributes
Model Number: 2SAR554RTL
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
340MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SAR554RTL
Package:
SOT-346
Product Description

2SAR554R PNP Middle Power Transistor

The 2SAR554R is a PNP middle power transistor designed for driver applications. It offers low VCE(sat) of -400mV (Max.) at IC/IB=-500mA/-25mA, making it suitable for low frequency amplification and high-speed switching applications. It is complementary to the NPN type 2SCR554R.

Product Attributes

  • Brand: ROHM
  • Complementary NPN Type: 2SCR554R

Technical Specifications

ParameterSymbolConditionsValueUnit
Absolute Maximum Ratings
Collector-base voltageVCBO-80V
Collector-emitter voltageVCEO-80V
Emitter-base voltageVEBO-6V
Collector currentIC-1.5A
Collector current (Pulsed)ICP*1PW=10ms, Single pulse-3A
Power dissipationPD*2Each terminal mounted on a reference land.0.5W
Power dissipationPD*3Mounted on a ceramic board(40400.7mm).1.0W
Junction temperatureTj150
Range of storage temperatureTstg-55 to +150
Electrical Characteristics
Collector-base breakdown voltageBVCBOIC = -100A-80V
Collector-emitter breakdown voltageBVCEOIC = -1mA-80V
Emitter-base breakdown voltageBVEBOIE = -100A-6V
Collector cut-off currentICBOVCB = -80V-1.0A
Emitter cut-off currentIEBOVEB = -4V-1.0A
Collector-emitter saturation voltageVCE(sat)IC = -500mA, IB = -25mA-400 (Max.)mV
DC current gainhFEVCE = -3V, IC = -100mA120 - 390-
Transition frequencyfTVCE = -10V, IE = 200mA, f = 100MHz340MHz
Output capacitanceCobVCB = -10V, IE = 0A, f = 1MHz15pF
Turn-On timetonIC = -700mA, IB1 = -70mA, IB2 = 70mA, VCC -10V, RL = 1550ns
Storage timetstg300ns
Fall timetf50ns

2201131330_ROHM-2SAR554RTL_C962667.pdf

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