Digital Transistor ROHM DTC114TETL NPN Featuring Built In Biasing Resistors for Interface and Driver

Key Attributes
Model Number: DTC114TETL
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
10kΩ
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC114TETL
Package:
SOT-416
Product Description

Product Overview

The DTC114T series is a range of NPN digital transistors featuring built-in biasing resistors, simplifying circuit design by eliminating the need for external input resistors. These transistors are ideal for inverter, interface, and driver applications, offering easy configuration for on/off conditions. Complementary PNP types are available in the DTA114T series.

Product Attributes

  • Brand: ROHM

Technical Specifications

Part No. Package Package Size VCEO (V) IC (mA) R1 (k) Power Dissipation (mW) Marking
DTC114TM SOT-723 1212 50 100 10 150*1 04
DTC114TEB SOT-416FL 1616 50 100 10 150*1 04
DTC114TE SOT-416 1616 50 100 10 150*1 04
DTC114TUB SOT-323FL 2021 50 100 10 200*1 04
DTC114TUA SOT-323 2021 50 100 10 200*1 04
DTC114TKA SOT-346 2928 50 100 10 200*1 04

Electrical Characteristics (Ta = 25C)

Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-base breakdown voltage BVCBO IC = 50A 50 - - V
Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - - V
Emitter-base breakdown voltage BVEBO IE = 50A 5 - - V
Collector cut-off current ICBO VCB = 50V - - 500 nA
Emitter cut-off current IEBO VEB = 4V - - 500 nA
Collector-emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA - - 300 mV
DC current gain hFE VCE = 5V, IC = 1mA 100 250 600 -
Input resistance R1 - 7 10 13 k
Transition frequency fT*2 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor

Applications

  • INVERTER
  • INTERFACE
  • DRIVER

2304140030_ROHM-DTC114TETL_C509877.pdf

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