30V complementary MOSFET Siliup SP3011CP8 in SOP8L package for battery protection and power switching
Key Attributes
Model Number:
SP3011CP8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9A;8.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@10V;15mΩ@4.5V;14mΩ@10V;18mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
109pF;300pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
940pF;1.6nF
Output Capacitance(Coss):
131pF;350pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
9.6nC@4.5V;30nC@4.5V
Mfr. Part #:
SP3011CP8
Package:
SOP-8
Product Description
Product Overview
The SP3011CP8 is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead-free, surface mount SOP-8L package and is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP3011CP8
- Technology: Complementary MOSFET
- Package: SOP-8L
- Certifications: Lead free product is acquired
- Testing: 100% Single Pulse avalanche energy Test
- Marking: 3011C (Device Code)
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Value | P-Channel Conditions | P-Channel Value | Units |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | N-Channel | 30V | P-Channel | -30V | V |
| VGS=0V , ID=250uA | 30 | VGS=0V , ID=-250uA | -30 | V | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V , ID=8A | 10 m (Typ.) | VGS=-10V , ID=-8A | 14 m (Typ.) | m |
| VGS=4.5V , ID=6A | 15 m (Typ.) | VGS=-4.5V , ID=-6A | 18 m (Typ.) | m | ||
| Continuous Drain Current | ID | N-Channel | 9A | P-Channel | -8.5A | A |
| Ta=25 | 9 | Ta=25 | -8.5 | A | ||
| Pulsed Drain Current | IDM | N-Channel | 36A | P-Channel | -34A | A |
| Ta=25 | 36 | Ta=25 | -34 | A | ||
| Single Pulse Avalanche Energy | EAS | N-Channel | 18 mJ | P-Channel | 36 mJ | mJ |
| VDD=15V, VGS=10V, L=0.5mH, RG=25 | 18 | VDD=-15V, VGS=-10V, L=0.5mH, RG=25 | 36 | mJ | ||
| Power Dissipation | PD | Ta=25 | 2.5 W | Ta=25 | 2.5 W | W |
| Thermal Resistance Junction-to-Ambient | RJA | N-Channel | 50 /W | P-Channel | 50 /W | /W |
| Storage Temperature Range | TSTG | -55 to 150 | ||||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||||
| Gate-Source Voltage | VGS | 20 V | V | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 V | VGS=0V , ID=-250uA | -30 V | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | 1 uA | VDS=-24V , VGS=0V , TJ=25 | -1 uA | uA |
| Gate-Source Leakage Current | IGSS | 100 nA | nA | |||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 to 2.5 V | VGS=VDS , ID =-250uA | -1 to -2.5 V | V |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | 940 pF | VDS=-15V , VGS=0V , f=1MHz | 1600 pF | pF |
| Output Capacitance | Coss | VDS=15V , VGS=0V , f=1MHz | 131 pF | VDS=-15V , VGS=0V , f=1MHz | 350 pF | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V , VGS=0V , f=1MHz | 109 pF | VDS=-15V , VGS=0V , f=1MHz | 300 pF | pF |
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | 9.6 nC | VDS=-15V , VGS=-4.5V , ID=-8A | 30 nC | nC |
| Gate-Source Charge | Qgs | VDS=15V , VGS=4.5V , ID=8A | 3.8 nC | VDS=-15V , VGS=-4.5V , ID=-8A | 5.5 nC | nC |
| Gate-Drain Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | 3.4 nC | VDS=-15V , VGS=-4.5V , ID=-8A | 8 nC | nC |
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=10V , RG=1.5, ID=8A | 4.2 nS | VDD=-15V, VGS=-10V , RG=6, ID=-1A | 10 nS | nS |
| Rise Time | Tr | VDD=15V, VGS=10V , RG=1.5, ID=8A | 8.2 nS | VDD=-15V, VGS=-10V , RG=6, ID=-1A | 15 nS | nS |
| Turn-Off Delay Time | Td(off) | VDD=15V, VGS=10V , RG=1.5, ID=8A | 31 nS | VDD=-15V, VGS=-10V , RG=6, ID=-1A | 110 nS | nS |
| Fall Time | Tf | VDD=15V, VGS=10V , RG=1.5, ID=8A | 4 nS | VDD=-15V, VGS=-10V , RG=6, ID=-1A | 70 nS | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 V | VGS=0V , IS=-1A , TJ=25 | -1.2 V | V |
| Maximum Body-Diode Continuous Current | IS | N-Channel | 9 A | P-Channel | -8.5 A | A |
| Reverse Recovery Time | Trr | IS=7A, di/dt=100A/us, TJ=25 | 2 nS | IS=-7A, di/dt=100A/us, TJ=25 | 9 nS | nS |
| Reverse Recovery Charge | Qrr | IS=7A, di/dt=100A/us, TJ=25 | 15 nC | IS=-7A, di/dt=100A/us, TJ=25 | 33 nC | nC |
| Symbol | Dimensions In Millimeters (Min.) | Dimensions In Millimeters (Max.) |
|---|---|---|
| A | 1.35 | 1.75 |
| A1 | 0.10 | 0.25 |
| A2 | 1.35 | 1.55 |
| b | 0.33 | 0.51 |
| c | 0.17 | 0.25 |
| D | 4.80 | 5.00 |
| e | 1.27 REF. | |
| E | 5.80 | 6.20 |
| E1 | 3.80 | 4.00 |
| L | 0.40 | 1.27 |
| 0 | 8 |
| Device | Package | Unit/Tape |
|---|---|---|
| SP3011CP8 | SOP-8L | 4000 |
2504101957_Siliup-SP3011CP8_C22385407.pdf
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