86--136 6733 2386
quality NPN digital transistor ROHM DTC115EETL featuring integrated biasing resistors for easy circuit design factory
quality NPN digital transistor ROHM DTC115EETL featuring integrated biasing resistors for easy circuit design factory

NPN digital transistor ROHM DTC115EETL featuring integrated biasing resistors for easy circuit design

Key Attributes
Model Number: DTC115EETL
Product Custom Attributes
Output Voltage(VO(on)):
300mV@5mA,0.25mA
Input Resistor:
130kΩ
Resistor Ratio:
1.2
Number:
1 NPN (Pre-Biased)
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC115EETL
Package:
SC-75(SOT-416)
Product Description

Product Overview

The DTC115E series is a range of NPN digital transistors featuring built-in biasing resistors (R1 = R2 = 100k). This integrated design simplifies circuit configuration, particularly for inverter circuits, by eliminating the need for external input resistors. The DTC115E series offers easy circuit design by focusing solely on on/off conditions. It is suitable for applications such as inverters, interfaces, and drivers. Complementary PNP types are available in the DTA115E series.

Product Attributes

  • Brand: ROHM

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
DTC115EM SOT-723 1212 T2L 180 8 8000 29
DTC115EEB SOT-416FL 1616 TL 180 8 3000 29
DTC115EE SOT-416 1616 TL 180 8 3000 29
DTC115EUB SOT-323FL 2021 TL 180 8 3000 29
DTC115EUA SOT-323 2021 T106 180 8 3000 29
DTC115EKA SOT-346 2928 T146 180 8 3000 29
Parameter Symbol Conditions Value Unit
Supply voltage VCC 50 V
Input voltage VIN -10 to 40 V
Output current IO 20 mA
Collector current (MAX) IC(MAX)*1 100 mA
Power dissipation PD*2 Ta = 25C 150 to 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
Input voltage (VI(off)) VCC = 5V, IO = 100A - 0.5 V
Input voltage (VI(on)) VO = 0.3V, IO = 1mA 3.0 - V
Output voltage (VO(on)) IO = 5mA, II = 0.25mA - 100 to 300 mV
Input current II VI = 5V - 150 A
Output current (IO(off)) VCC = 50V, VI = 0V - 500 nA
DC current gain GI VO = 5V, IO = 5mA 82 -
Input resistance R1 70 to 130 k
Resistance ratio R2/R1 0.8 to 1.2 -
Transition frequency fT*1 VCE = 10V, IE = -5mA, f = 100MHz - 250 MHz

2210111600_ROHM-DTC115EETL_C3589085.pdf
Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance factory
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
quality Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current factory
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
quality power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching factory
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.