Low forward voltage Schottky diode SEP 1N5819WS S4 in compact SOD 323 package for power applications
Key Attributes
Model Number:
1N5819WS S4
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Voltage - DC Reverse (Vr) (Max):
40V
Operating Junction Temperature Range:
-65℃~+125℃
Reverse Leakage Current (Ir):
5uA@30V
Current - Rectified:
350mA
Mfr. Part #:
1N5819WS S4
Package:
SOD-323
Product Description
Product Overview
The 1N5819WS is a surface mount Schottky barrier diode designed for efficient rectification. It features a low forward voltage, making it suitable for various power applications where low power loss is critical. The SOD-323 package allows for easy integration into compact electronic designs.
Product Attributes
- Brand: wei wang sep
- Package Type: SOD-323
Technical Specifications
| Parameter | Symbol | Value | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 40 | V | |||
| Reverse Voltage | VR | 40 | V | |||
| Average Forward Rectified Current | IF(AV) | 350 | mA | |||
| Non-Repetitive Peak Forward Surge Current (t = 1 s) | IFSM | 2 | A | |||
| Power Dissipation | Ptot | 200 | mW | |||
| Operating and Storage Temperature Range | Tj, Tstg | -65 to 125 | C | |||
| Reverse Breakdown Voltage | V(BR)R | 40 | V | |||
| Reverse Leakage Current (VR = 30 V) | IR | A | 5 | |||
| Forward Voltage (IF = 20 mA) | VF | V | 0.37 | |||
| Forward Voltage (IF = 200 mA) | VF | V | 0.6 | |||
| Total Capacitance (VR = 0 V, f = 1 MHz) | CT | pF | 50 | |||
| Reverse Recovery Time (IF = IR = 200 mA, Irr = 0.1 IR, RL = 100 ) | trr | ns | 10 |
2508291505_SEP-1N5819WS-S4_C50176372.pdf
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