Power Electronics MOSFET Siliup SP95N65CTO Silicon Carbide 650V High Blocking Voltage
Key Attributes
Model Number:
SP95N65CTO
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
135A
Operating Temperature -:
-55℃~+175℃
RDS(on):
32mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
19pF
Input Capacitance(Ciss):
3.09nF
Pd - Power Dissipation:
720W
Output Capacitance(Coss):
251pF
Gate Charge(Qg):
125nC
Mfr. Part #:
SP95N65CTO
Package:
TOLL-8
Product Description
Product Overview
The SP95N65CTO is a 650V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high-speed switching with low capacitances and high blocking voltage combined with low RDS(on). It is designed for easy paralleling and simple driving, making it suitable for a wide range of power electronics applications. The SP95N65CTO is RoHS compliant.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Material: Silicon Carbide (SiC)
- Compliance: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 650 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @10V | 25 | m | ||
| Continuous Drain Current | ID | 95 | A | |||
| Features | ||||||
| High Speed Switching with Low Capacitances, High Blocking Voltage with Low RDS(on), Easy to Parallel, Simple to Drive, RoHS Compliant | ||||||
| Applications | ||||||
| Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverter, UPS Power Supply, Motor Drive, High Voltage DC/DC Converter | ||||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGSMAX | -10 | +22 | V | ||
| Recommended Gate-Source Voltage | VGSop | -5 | +18 | V | ||
| Continuous Drain Current (Tc=25) | ID | 135 | A | |||
| Continuous Drain Current (Tc=100) | ID | 95 | A | |||
| Pulsed Drain Current | IDM | 280 | A | |||
| Total Power Dissipation (Tc=25) | PD | 720 | W | |||
| Total Power Dissipation (Tc=100) | PD | 352 | W | |||
| Thermal Resistance Junction-Case | RJC | 0.21 | /W | |||
| Storage Temperature Range | TSTG | -55 | 175 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=100uA | 650 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=650V, VGS=0V, TJ=25 | - | 3 | 100 | uA |
| Gate-Source Leakage Current | IGSS | VGS=-5V~+20V, VDS=0V, TJ=25 | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=12mA, Tj=25 | 2.0 | 2.8 | 4.0 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=12mA, Tj=175 | - | 2.0 | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=40A, Tj=25 | - | 25 | 32 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=40A, Tj=175 | - | 38 | - | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=15V, ID=40A, Tj=25 | - | 35 | - | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=15V, ID=40A, Tj=175 | - | 42 | - | m |
| Input Capacitance | Ciss | VDS=600V, VGS=0V, f=1MHz, VAC=25mV | - | 3090 | - | pF |
| Output Capacitance | Coss | - | 251 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 19 | - | pF | |
| Total Gate Charge | Qg | VDS=400V, VGS= -3/+18V, ID=40A | - | 125 | - | nC |
| Gate-Source Charge | Qgs | - | 36 | - | nC | |
| Gate-Drain Charge | Qgd | - | 38 | - | nC | |
| Turn-On Delay Time | Td(on) | VDS=400V, VGS= 3.5/+18V, ID=40A, RG=3.3 | - | 4.4 | - | ns |
| Rise Time | Tr | - | 21.3 | - | ns | |
| Turn-Off Delay Time | Td(off) | - | 20.6 | - | ns | |
| Fall Time | Tf | - | 9.7 | - | ns | |
| Turn-On Energy | Eon | - | 30 | - | J | |
| Turn-Off Energy | Eoff | - | 71 | - | J | |
| Total Switching Loss | Etot | - | 101 | - | J | |
| Diode Forward Voltage | VSD | VGS= -5V, ISD=20A, TJ=25 | - | 3.7 | - | V |
| Diode Forward Voltage | VSD | VGS= -5V, ISD=20A, TJ=175 | - | 3.5 | - | V |
| Diode forward current | IS | VGS= -2V, TJ=25 | - | - | 133 | A |
| Diode forward current | IS | VGS= -2V, TJ=175 | - | - | 90 | A |
| Reverse Recovery Time | trr | VGS=-3.5V/+18V, ISD=40A, VR=400V, di/dt=3000A/s | - | 16 | - | ns |
| Reverse Recovery Charge | Qrr | - | 125 | - | nC | |
| Peak Reverse Recovery Current | Irrm | - | 28 | - | A | |
| Package Information | ||||||
| Package Type | TOLL | |||||
| Marking | SP95N65CTO | |||||
| Order Information | Device | Package | Unit/Tape | |||
| SP95N65CTO | TOLL | 2000 | ||||
| SP90N65CTO | ||||||
Package Dimensions (TO-247-3L):
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
2505131730_Siliup-SP95N65CTO_C48888556.pdf
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