Surface Mount Compatible 30V MOSFET Siliup SP3023CNJ with Low On Resistance and Halogen Free Certification
Key Attributes
Model Number:
SP3023CNJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A;8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V;30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF;112pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
416pF;850pF
Output Capacitance(Coss):
62pF;116pF
Pd - Power Dissipation:
16W
Gate Charge(Qg):
5nC@4.5V;13nC@10V
Mfr. Part #:
SP3023CNJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description
Product Overview
The SP3023CNJ is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, this device offers fast switching speeds and is ROHS Compliant & Halogen-Free. It features 100% single pulse avalanche energy testing. Key applications include DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP3023CNJ
- Package: PDFN3X3-8L
- Certifications: ROHS Compliant & Halogen-Free
- Device Code: 3023C
Technical Specifications
| Parameter | Symbol | N-Channel | P-Channel | Unit | |
|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 30 | -30 | V | |
| Static Drain-Source On-Resistance | RDS(on) | 18 (@10V), 24 (@4.5V) | 30 (@-10V), 45 (@-4.5V) | m | |
| Continuous Drain Current | ID | 12 | -8 | A | |
| Pulse Drain Current | IDM | 48 | -32 | A | |
| Single pulsed avalanche energy | EAS | 30 | 36 | mJ | |
| Power Dissipation | PD | 12 (Tc=25C) | W | ||
| Thermal Resistance Junction-to-Case | RJC | 10.4 (Tc=25C) | C/W | ||
| Storage Temperature Range | TSTG | -55 to 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | C | ||
| N-Electrical characteristics | Drain-Source Breakdown Voltage | BVDSS | 30 | - | V |
| Drain-Source Leakage Current | IDSS | - | - | 1 (VDS=24V, VGS=0V) | uA |
| Gate-Source Leakage Current | IGSS | 100 (VGS=20V, VDS=0V) | nA | ||
| Gate Threshold Voltage | VGS(th) | 1.0 - 2.5 | -1.0 - -2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | 18 - 30 (VGS=10V, ID=8A) | - | m | |
| Input Capacitance | Ciss | 416 (VDS=15V, VGS=0V, f=1MHz) | pF | ||
| Output Capacitance | Coss | 62 (VDS=15V, VGS=0V, f=1MHz) | pF | ||
| Reverse Transfer Capacitance | Crss | 51 (VDS=15V, VGS=0V, f=1MHz) | pF | ||
| Total Gate Charge | Qg | 5 (VDS=15V, VGS=4.5V, ID=8A) | nC | ||
| Gate-Source Charge | Qgs | 1.1 | nC | ||
| Gate-Drain Charge | Qg d | 2.6 | nC | ||
| Turn-On Delay Time | Td(on) | 7.7 (VDD=15V, VGS=10V, RG=1.5, ID=8A) | nS | ||
| Rise Time | Tr | 46 | nS | ||
| Turn-Off Delay Time | Td(off) | 11 | nS | ||
| Fall Time | Tf | 3.6 | nS | ||
| Diode Forward Voltage | VSD | 1.2 (VGS=0V, IS=1A, TJ=25) | V | ||
| Maximum Body-Diode Continuous Current | IS | 12 | A | ||
| Reverse recover time | Trr | 18 (IS=10A, di/dt=100A/us, Tj=25) | nS | ||
| Reverse recovery charge | Qrr | 2 | nC | ||
| P-Electrical characteristics | Drain-Source Breakdown Voltage | BVDSS | - | -30 | V |
| Drain-Source Leakage Current | IDSS | - | -1 (VDS=-24V, VGS=0V, TJ=25) | uA | |
| Gate-Source Leakage Current | IGSS | 100 (VGS=20V, VDS=0V) | nA | ||
| Gate Threshold Voltage | VGS(th) | - | -1.0 - -2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | - | 30 - 40 (-10V, -6A) | m | |
| Input Capacitance | Ciss | 850 (VDS=-15V, VGS=0V, f=1MHz) | pF | ||
| Output Capacitance | Coss | 116 (VDS=-15V, VGS=0V, f=1MHz) | pF | ||
| Reverse Transfer Capacitance | Crss | 112 (VDS=-15V, VGS=0V, f=1MHz) | pF | ||
| Total Gate Charge | Qg | 13 (VDS=-15V, VGS=-10V, ID=-6.5A) | nC | ||
| Gate-Source Charge | Qgs | 2.6 | nC | ||
| Gate-Drain Charge | Qg d | 2.2 | nC | ||
| Turn-On Delay Time | Td(on) | 7.5 (VDD=-15V, VGS=-10V, RG=3, ID=-4A) | nS | ||
| Rise Time | Tr | 5.5 | nS | ||
| Turn-Off Delay Time | Td(off) | 19 | nS | ||
| Fall Time | Tf | 7 | nS | ||
| Diode Forward Voltage | VSD | -1.2 (VGS=0V, IS=-1A, TJ=25) | V | ||
| Maximum Body-Diode Continuous Current | IS | -8 | A | ||
| Reverse recover time | Trr | 0.9 (IS=-20A, di/dt=-100A/us, Tj=25) | nS | ||
| Reverse recovery charge | Qrr | 7 | nC | ||
| PDFN3X3-8L Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 REF. | 0.006 REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 0.935 | 1.135 | 0.037 | 0.045 |
| D2 | 0.280 | 0.480 | 0.011 | 0.019 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | ||
| L3 | 0~0.100 | 0~0.004 | ||
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 | |
2504101957_Siliup-SP3023CNJ_C22385432.pdf
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