Low noise voltage controlled oscillator varactor diode SKYWORKS SMV1220-079LF with RoHS compliant lead finish
Key Attributes
Model Number:
SMV1220-079LF
Product Custom Attributes
Capacitance Ratio:
4@C1V/C4V
Diode Configuration:
Independent
DC Reverse Voltage(Vr):
20V
Diode Capacitance:
7.55pF@4V,1MHz
Mfr. Part #:
SMV1220-079LF
Package:
SC-79
Product Description
Skyworks SMV1220-079LF: Hyperabrupt Junction Tuning Varactor
Product Overview
The Skyworks SMV1220-079LF is a silicon hyperabrupt junction varactor diode engineered for battery-powered applications. It features a high-capacitance ratio and low-series resistance, making it ideal for low phase-noise Voltage-Controlled Oscillators (VCOs) operating at frequencies up to and exceeding 2.5 GHz. This varactor is suitable for low-noise and wideband UHF and VHF VCOs in wireless systems, including GSM, PCS, CDMA, and analog phones.
Product Attributes
- Brand: Skyworks Solutions, Inc.
- Product Line: Hyperabrupt Junction Tuning Varactor
- Cross Reference: Renesas HVC365
- Package: Ultrasmall SC-79
- Moisture Sensitivity Level (MSL): MSL1
- Soldering Temperature: 260 C per JEDEC J-STD-020
- Certifications: Skyworks Green (compliant with applicable legislation and halogen-free)
- Packaging Type: Single SC-79
- Marking: Cathode and KA
- Lead Finish: Pb-free (indicated by "LF" in part number), RoHS-compliant
Technical Specifications
| Parameter | Symbol | Test Condition | Minimum | Typical | Maximum | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Reverse voltage | VR | 20 | V | |||
| Forward current | IF | 20 | mA | |||
| Power dissipation | PDIS | 250 | mW | |||
| Operating temperature | TOP | -55 | 125 | C | ||
| Storage temperature | TSTG | -55 | 150 | C | ||
| Electrical Specifications | ||||||
| Reverse current | IR | VR = 16 V | 10 | nA | ||
| Capacitance | CT | f = 1 MHz, VR = 1 V | 27.30 | 28.25 | pF | |
| f = 1 MHz, VR = 4 V | 6.05 | 7.55 | pF | |||
| Capacitance ratio | CTR | CT @ 1 V / CT @ 4 V | 3.0 | 4.0 | ||
| Series resistance | RS | f = 470 MHz, VR = 4 V | 0.50 | 0.65 | ||
| Breakdown voltage | VBR | IR = 10 A | 20 | V | ||
| SPICE Model Parameters | ||||||
| CJO (pF) | 48.43 | |||||
| VJ (V) | 13 | |||||
| M | 9 | |||||
| CP (pF) | 3.2 | |||||
| RS () | 0.52 | |||||
| LS (nH) | 0.70 | |||||
Package Dimensions (SC-79)
Refer to Figure 3 in the provided documentation for detailed SC-79 package dimensions.
Tape and Reel Dimensions (SC-79)
Standard reel size: 7 inches. Standard reel quantity: 3000 pcs. Refer to Figure 4 in the provided documentation for detailed SC-79 tape and reel dimensions.
2410301828_SKYWORKS-SMV1220-079LF_C17370636.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
