Silicon Carbide MOSFET Siliup SP25N120CTK 1200V Low On Resistance Device for Photovoltaic Inverters
Key Attributes
Model Number:
SP25N120CTK
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
52A
Operating Temperature -:
-55℃~+175℃
RDS(on):
60mΩ@18V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Pd - Power Dissipation:
171W
Input Capacitance(Ciss):
1.92nF
Output Capacitance(Coss):
80pF
Gate Charge(Qg):
87nC
Mfr. Part #:
SP25N120CTK
Package:
TO-247-4L
Product Description
Product Overview
The SP25N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-speed switching applications with low capacitances and high blocking voltage. It offers low RDS(on), ease of paralleling, and simple driving characteristics, making it suitable for demanding power electronics applications. This RoHS-compliant device is ideal for Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, Motor Drives, High Voltage DC/DC Converters, and Switching Mode Power Supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Material: Silicon Carbide (SiC)
- Certification: RoHS Compliant
- Package: TO-247-4L
- Device Code: 25N120C
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 1200 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @18V | 60 | m | ||
| Continuous Drain Current | ID | 25 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 1200 | V | ||
| Gate-Source Voltage | VGSMAX | (Ta=25) | -8/+22 | V | ||
| Recommended Gate-Source Voltage | VGSop | (Ta=25) | -4/+18 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 52 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 25 | A | ||
| Pulsed Drain Current | IDM | 80 | A | |||
| Single Pulse Avalanche Energy | EAS | 1125 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 171 | W | ||
| Power Dissipation | PD | (Tc=100) | 68 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.73 | /W | |||
| Storage Temperature Range | TSTG | -55 | 175 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 1200 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=1200V, VGS=0V, TJ=25 | - | 1 | - | uA |
| Gate-Source Leakage Current | IGSS | VGS=18V, VDS=0V | - | - | 250 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=5mA, Tj=25 | 2 | 2.5 | 4 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=5mA, Tj=100 | - | 1.8 | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=20A, Tj=25 | - | 60 | 75 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=20A, Tj=150 | - | 90 | - | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=1000V, VGS=0V, f=1MHz | - | 1920 | - | pF |
| Output Capacitance | Coss | - | 80 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 5 | - | pF | |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=800V, VGS=-4/+18V, ID=20A | - | 87 | - | nC |
| Gate-Source Charge | Qgs | - | 29 | - | nC | |
| Gate-Drain Charge | Qg | - | 31 | - | nC | |
| Rise Time | Tr | - | 75 | - | ns | |
| Turn-Off Delay Time | Td(off) | - | 89 | - | ns | |
| Fall Time | Tf | - | 29 | - | ns | |
| Reverse Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=-4V, ISD=20A, TJ=25 | - | 4.5 | - | V |
| Diode Forward Voltage | VSD | VGS=-4V, ISD=20A, TJ=150 | - | 4 | - | V |
| Continuous Diode Forward Current | IS | VGS=-4V, Tc=25C | - | 43 | - | A |
| Continuous Diode Forward Current | IS | VGS=-4V, Tc=100C | - | 24 | - | A |
| Reverse Recovery Time | trr | VGS=-4V, ISD=20A, VR=800V, di/dt=3700A/s | - | 32 | - | nS |
| Reverse Recovery Charge | Qrr | - | 265 | - | nC | |
| Peak Reverse Recovery Current | Irrm | - | 16 | - | A | |
| Package Information (TO-247-4L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.83 - 5.21 | 0.19 - 0.21 | ||||
| A1 | 2.29 - 2.54 | 0.09 - 0.10 | ||||
| A2 | 1.91 - 2.16 | 0.08 - 0.09 | ||||
| b1 | 2.39 - 2.94 | 0.09 - 0.12 | ||||
| b3 | 1.07 - 1.60 | 0.04 - 0.06 | ||||
| b5 | 2.39 - 2.69 | 0.09 - 0.11 | ||||
| c | 0.55 - 0.68 | 0.02 - 0.03 | ||||
| D | 23.30 - 23.60 | 0.92 - 0.93 | ||||
| D1 | 16.25 - 17.65 | 0.64 - 0.69 | ||||
| D2 | 0.95 - 1.25 | 0.04 - 0.05 | ||||
| E | 15.75 - 16.13 | 0.62 - 0.64 | ||||
| E1 | 13.10 - 14.15 | 0.52 - 0.56 | ||||
| E2 | 3.68 - 5.10 | 0.14 - 0.20 | ||||
| E3 | 1.00 - 1.90 | 0.04 - 0.07 | ||||
| E4 | 12.38 - 13.43 | 0.49 - 0.53 | ||||
| e | 2.54 BSC | 0.1 BSC | ||||
| e1 | 5.08 BSC | 0.2 BSC | ||||
| L | 17.31 - 17.82 | 0.68 - 0.70 | ||||
| L1 | 3.97 - 4.37 | 0.16 - 0.17 | ||||
| L2 | 2.35 - 2.65 | 0.09 - 0.10 | ||||
| P | 3.51 - 3.65 | 0.14 | ||||
| Q | 5.49 - 6.00 | 0.22 - 0.24 | ||||
| S | 6.04 - 6.30 | 0.24 - 0.25 | ||||
| T | 17.5 REF. | 0.69 REF. | ||||
| W | 3.5 REF. | 0.14 REF. | ||||
| X | 4.0 REF. | 0.16 REF. | ||||
2504101957_Siliup-SP25N120CTK_C22466831.pdf
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