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quality General Purpose Switching Transistor Slkor BCP68-25 NPN Silicon with 1 Amp Collector Current Capacity factory
quality General Purpose Switching Transistor Slkor BCP68-25 NPN Silicon with 1 Amp Collector Current Capacity factory

General Purpose Switching Transistor Slkor BCP68-25 NPN Silicon with 1 Amp Collector Current Capacity

Key Attributes
Model Number: BCP68-25
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@500mA,1V
Transition Frequency(fT):
40MHz
Vce Saturation(VCE(sat)):
500mV
Type:
NPN
Pd - Power Dissipation:
1.35W
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-45℃~+150℃
Mfr. Part #:
BCP68-25
Package:
SOT-223
Product Description

Product Overview

The BCP68 is an NPN Silicon Transistor designed for general purpose switching and amplification applications, particularly under high current conditions. It offers high current capabilities up to 1 A and operates at low voltages up to 20 V. Key features include a maximum collector current of 1 A and a peak collector current of 2 A.

Product Attributes

  • Brand: slkormicro (implied by website reference)
  • Model: BCP68
  • Package Type: SOT-223

Technical Specifications

Parameter Symbol Conditions Min Typ Max Unit
ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified)
Collector-Base Voltage (Open Emitter) VCBO 32 V
Collector-Emitter Voltage (Open Base) VCEO 20 V
Emitter-Base Voltage (Open Collector) VEBO 5 V
DC Collector Current IC 1 A
Peak Collector Current ICM 2 A
Peak Base Current IBM 200 mA
Total Power Dissipation (Ta 25) PD 1.35 W
Junction Temperature TJ 150
Operating Temperature TOPR -45 +150
Storage Temperature TSTG -65 +150
THERMAL DATA
Thermal Resistance From Junction To Ambient JA 91 /W
ELECTRICAL CHARACTERISTICS (TJ = 25, unless otherwise specified.)
Collector-Emitter Saturation Voltage VCE(SAT) IC = 1A, IB =100mA 500 mV
IC = 5mA, VCE = 10V 620 mV
Base-Emitter Voltage VBE IC = 1A, VCE = 1V 1 V
Collector Cut-off Current ICBO IE = 0, VCB = 25V 100 nA
IE = 0, VCB = 25V, TJ = 150 10 A
Emitter Cut-off Current IEBO IC = 0, VEB = 5V 100 nA
DC Current Gain hFE IC = 5mA, VCE = 10V 50
IC = 500mA, VCE = 1V 85 300
IC = 1A, VCE = 1V 60
Collector Capacitance CC IE = ie = 0, VCB = 5V, f = 1MHz 48 pF
Transition Frequency fT IC = -10mA, VCE = -5V, f = 100MHz 40 MHz
DC Current Gain Ratio of the Complementary Pairs hFE1 / hFE2 |IC| = 0.5A, |VCE| = 1V 1.6
hFE CLASSIFICATION
RANK RANGE
16 100~250
25 200~300

1912241104_Slkor-BCP68-25_C473809.pdf

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