General purpose PNP transistor Slkor 2SA812-M7 with high collector emitter voltage and current gain
Key Attributes
Model Number:
2SA812-M7
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
600@1mA,6V
Transition Frequency(fT):
180MHz
Type:
PNP
Vce Saturation(VCE(sat)):
300mV
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SA812-M7
Package:
SOT-23
Product Description
Product Overview
The 2SA812 is a PNP bipolar junction transistor (BJT) encapsulated in a SOT-23 plastic package. It is designed as a complementary type to the 2SC1623 transistor. Key features include a high DC current gain (hFE) of up to 200 TYP. at VCE=-6V and IC=-1mA, and a high collector-emitter voltage rating of -50V. This transistor is suitable for general-purpose amplification and switching applications where these characteristics are beneficial.
Product Attributes
- Type: PNP Transistor
- Package: SOT-23 Plastic-Encapsulated
- Complementary to: 2SC1623
- Marking: M4, M5, M6, M7 (depending on hFE rank)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -60 | V | |||
| Collector-Emitter Voltage | VCEO | -50 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current - Continuous | IC | -100 | mA | |||
| Collector Power Dissipation | PC | TA=25 | 200 | mW | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= -1mA, IB=0 | -50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= -100A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=- 60 V, IE=0 | -0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= -5V, IC=0 | -0.1 | A | ||
| DC current gain | hFE | VCE=- 6V, IC= -1mA | 90 | 600 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-100mA, IB= -10mA | -0.3 | V | ||
| Base-emitter voltage | VBE | IC=-1mA, VCE=-6V | -0.58 | -0.68 | V | |
| Transition frequency | fT | VCE=-6V, IC= -10mA | 180 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V,IE=0,f=1MHz | 4.5 | pF |
hFE Classification
| Rank | Range |
|---|---|
| M4 | 90-180 |
| M5 | 135-270 |
| M6 | 200-400 |
| M7 | 300-600 |
2409272232_Slkor-2SA812-M7_C5122605.pdf
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