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quality Medium power NPN transistor Slkor MMBT5551T with low leakage currents and plastic surface mount package SOT 523 factory
quality Medium power NPN transistor Slkor MMBT5551T with low leakage currents and plastic surface mount package SOT 523 factory

Medium power NPN transistor Slkor MMBT5551T with low leakage currents and plastic surface mount package SOT 523

Key Attributes
Model Number: MMBT5551T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
DC Current Gain:
300@10mA,5V
Transition Frequency(fT):
300MHz
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMBT5551T
Package:
SOT-523
Product Description

Product Overview

The MMBT5401T is an NPN transistor designed for medium power amplification and switching applications. It offers complementary functionality to the MMBT5551T.

Product Attributes

  • Marking: G1
  • Package: Plastic surface mounted package; 3 leads SOT-523
  • Transistor Type: NPN
  • Brand: SLKORMICRO (implied by website URL)

Technical Specifications

Parameter Symbol Test Conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=120V, IE=0 50 nA
Emitter cut-off current IEBO VEB=4V, IC=0 50 nA
DC current gain hFE1* VCE=5V, IC=1mA 80
DC current gain hFE2* VCE=5V, IC =10mA 100 300
DC current gain hFE3* VCE=5V, IC=50mA 50
Collector-emitter saturation voltage VCEsat* IC=10mA, IB=1mA 0.15 V
Collector-emitter saturation voltage VCEsat* IC=50mA, IB=5mA 0.2 V
Base-emitter saturation voltage VBEsat* IC=10mA, IB=1mA 1 V
Base-emitter saturation voltage VBEsat* IC=50mA, IB=5mA 1 V
Transition frequency fT VCE=10V, IC=10mA, f=100MHz 100 300 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 6 pF
Input capacitance Cib VBE=0.5V, IC=0, f=1MHz 20 pF
Noise figure NF VCE=5V, Ic=0.25mA, f=10Hz to 15.7KHz, Rs=1k 8 dB
Symbol Parameter Value Units
VCBO Collector-Base Voltage 180 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.6 A
PC Collector Power Dissipation 200 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
Symbol Dimension Millimeters (Min) Millimeters (Max)
A 0.60 0.80
A1 0.010 0.100
B 0.95 1.05
bp 0.26 0.40
bq 0.16 0.30
C 0.09 0.15
D 1.50 1.70
E 0.70 0.85
HE 1.45 1.75
Lp 0.16 0.36
0 5

2412171034_Slkor-MMBT5551T_C42415187.pdf

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