Small Signal Dual PNP Transistor Slkor MMDT3906 RoHS Compliant Lead Free for Switching and Amplifier
Key Attributes
Model Number:
MMDT3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
DC Current Gain:
100@10mA,1V
Transition Frequency(fT):
250MHz
Number:
2 PNP
Type:
PNP
Vce Saturation(VCE(sat)):
400mV
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMDT3906
Package:
SOT-363
Product Description
Product Overview
The MMDT3906 is a dual PNP small signal transistor designed for switching and AF amplifier applications. It features a rugged and reliable construction, meeting UL 94 V-0 flammability rating for its epoxy casing. This RoHS compliant and Lead Free component offers excellent performance characteristics for various electronic designs.
Product Attributes
- Flammability Rating: UL 94 V-0
- Compliance: Lead Free Finish/RoHS Compliant
- Application: Switching and AF Amplifier Applications
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Max | Units |
|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25 ) | |||||
| VCBO | Collector-Base Voltage | -40 | V | ||
| VCEO | Collector-Emitter Voltage | -40 | V | ||
| VEBO | Emitter-Base Voltage | -5 | V | ||
| PC | Collector Power Dissipation | 200 | mW | ||
| IC | Collector Current - Continuous | -200 | mA | ||
| TJ | Junction Temperature | 150 | |||
| TSTG | Storage Temperature | -55 | 150 | ||
| RJA | Thermal Resistance From Junction To Ambient | 625 | /W | ||
| Electrical Characteristics (Ta = 25 ) | |||||
| V(BR)CBO | Collector-Base Breakdown Voltage | IC = -10A, IE =0 | -40 | V | |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC = -1mA, IB =0 | -40 | V | |
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE = -10A, IC =0 | -5 | V | |
| IBL | Base Cutoff Current | VCE = -30V, VBE(OFF) =-3V | -50 | nA | |
| ICEX | Collector Cutoff Current | VCE = -30V, VBE(OFF) =-3V | -50 | nA | |
| VCE(sat) | Collector-Emitter Saturation Voltage | IC = -10mA, IB =-1mA | -0.25 | V | |
| IC = -50mA, IB =-5mA | -0.4 | V | |||
| VBE(sat) | Base-Emitter Saturation Voltage | IC = -10mA, IB =-1mA | -0.65 | -0.85 | V |
| IC = -50mA, IB =-5mA | -0.95 | V | |||
| hFE | DC Current Gain | VCE = -1V, IC =-0.1mA | 60 | ||
| VCE = -1V, IC =-1mA | 80 | ||||
| VCE = -1V, IC =-10mA | 100 | 300 | |||
| VCE = -1V, IC =-50mA | 60 | ||||
| fT | Transition Frequency | VCE = -20V, IC =-10mA, f=100MHz | 250 | MHz | |
| Cob | Output Capacitance | VCB = -5V, IE =0, f=1MHz | 4.5 | pF | |
| td | Delay Time | VCC = -3V, IC =-10mA , VBE(OFF) = -0.5V, IB1 =-1mA | 35 | nS | |
| tr | Rise Time | 35 | nS | ||
| ts | Storage Time | VCC = -3V, IC =-10mA , IB1 =- IB2 =-1mA | 225 | nS | |
| tf | Fall Time | 75 | nS | ||
2208230930_Slkor-MMDT3906_C2936029.pdf
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