20V P Channel MOSFET Siliup SP20P35TS with 4A Continuous Drain Current and Compact SOT-23-6L Package
Key Attributes
Model Number:
SP20P35TS
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@4.5V;45mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
80.4pF
Number:
1 P-Channel
Output Capacitance(Coss):
90.8pF
Pd - Power Dissipation:
2.8W
Input Capacitance(Ciss):
686pF
Gate Charge(Qg):
9.7nC@4.5V
Mfr. Part #:
SP20P35TS
Package:
SOT-23-6L
Product Description
Product Overview
The SP20P35TS is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capabilities in a compact SOT-23-6L surface mount package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP20P35TS
- Package Type: SOT-23-6L
- Device Code: 20P35
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on) | @-4.5V | 35 | m | |||
| RDS(on) | @-2.5V | 45 | m | |||
| Continuous Drain Current | ID | -4 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -4 | A | |||
| Pulse Drain Current | IDM | Tested | -16 | A | ||
| Power Dissipation | PD | 1.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 83 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.75 | -0.9 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-3.3A | - | 35 | 57 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V, ID=-2.8A | - | 45 | 76 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 686 | - | pF |
| Output Capacitance | Coss | - | 90.8 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 80.4 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-3A | - | 9.7 | - | nC |
| Gate-Source Charge | Qgs | - | 2.05 | - | ||
| Gate-Drain Charge | Qg d | - | 2.43 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=3.3, ID=3A | - | 4.8 | - | nS |
| Turn-On Rise Time | tr | - | 9.6 | - | ||
| Turn-Off Delay Time | td(off) | - | 52 | - | ||
| Turn-Off Fall Time | tf | - | 8.4 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| SOT-23-6L Package Information | ||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 1.050 | 1.250 | 0.041 | 0.049 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 1.050 | 1.150 | 0.041 | 0.045 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.100 | 0.200 | 0.004 | 0.008 |
| D | 2.820 | 3.020 | 0.111 | 0.119 |
| E | 1.500 | 1.700 | 0.059 | 0.067 |
| E1 | 2.650 | 2.950 | 0.104 | 0.116 |
| e | 0.950(BSC) | 0.037(BSC) | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.300 | 0.600 | 0.012 | 0.024 |
| 0 | 8 | 0 | 8 | |
2504101957_Siliup-SP20P35TS_C41354952.pdf
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