N Channel Power MOSFET Slkor 2N7002 with 60V Drain Source Voltage and Low Diode Forward Voltage Drop
Key Attributes
Model Number:
2N7002
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
225mW
Mfr. Part #:
2N7002
Package:
SOT-23
Product Description
Product Overview
The 2N7002 is an N-Channel Power MOSFET designed for high power and current handling capabilities. It features VDS = 60V and ID = 0.115A with RDS(ON) < 7.5 @ VGS=5V. This lead-free product is suitable for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: slkormicro
- Certifications: Lead free product is acquired
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | 1.0 | 2.5 | V | |
| Drain-Source On Voltage (ID=50mA,VGS=5V) | VDS(ON) | 0.375 | V | ||
| Drain-Source On Voltage (ID=500mA,VGS=10V) | VDS(ON) | 3.75 | V | ||
| Diode Forward Voltage Drop | VSD | 1.5 | V | ||
| Zero Gate Voltage Drain Current (VGS=0V, VDS= BVDSS) | IDSS | 1 | uA | ||
| Zero Gate Voltage Drain Current (VGS=0V, VDS=0.8BVDSS, TA=125) | IDSS | 500 | uA | ||
| Gate Body Leakage | IGSS | +100 | nA | ||
| Static Drain-Source On-State Resistance (ID=50mA,VGS=5V) | RDS(ON) | 7.5 | |||
| Static Drain-Source On-State Resistance (ID=500mA,VGS=10V) | RDS(ON) | 7.5 | |||
| Input Capacitance | CISS | 50 | pF | ||
| Common Source Output Capacitance | COSS | 25 | pF | ||
| Turn-ON Time | t(on) | 20 | ns | ||
| Turn-OFF Time | t(off) | 40 | ns | ||
| Reverse Recovery Time | trr | 400 | ns |
1912111437_Slkor-2N7002_C350313.pdf
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