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quality Silkor SL44H11 power transistor designed for operation in power amplification and switching circuits factory
quality Silkor SL44H11 power transistor designed for operation in power amplification and switching circuits factory

Silkor SL44H11 power transistor designed for operation in power amplification and switching circuits

Key Attributes
Model Number: SL44H11
Product Custom Attributes
Current - Collector Cutoff:
10uA
Emitter-Base Voltage(Vebo):
5V
Transition Frequency(fT):
50MHz
Vce Saturation(VCE(sat)):
1V@8A,0.4A
Type:
NPN
Pd - Power Dissipation:
50W
Current - Collector(Ic):
10A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
SL44H11
Package:
TO-220-3L
Product Description

Silicon NPN Power Transistors

The SL44H11 is a silicon NPN power transistor designed for general-purpose power amplification and switching. It features a low collector-emitter saturation voltage (VCE(sat)= 1.0V(Max)@ IC = 8A) and fast switching speeds, making it suitable for output or driver stages in applications such as switching regulators, converters, and power amplifiers. This transistor is a complement to the SL45H11 type, offering robust device performance and reliable operation with minimum lot-to-lot variations.

Product Attributes

  • Brand: SLKOR Micro
  • Model: SL44H11
  • Package Type: TO-220-3L

Technical Specifications

Symbol Parameter Conditions Value Unit
ABSOLUTE MAXIMUM RATINGS (Ta=25)
VCEO Collector-Emitter Voltage 80 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current-Continuous 10 A
ICM Collector Current-Peak 20 A
PC Collector Power Dissipation @TC=25 50 W
Tj Junction Temperature -55~150
Tstg Storage Temperature Range -55~150
THERMAL CHARACTERISTICS
Rth j-c Thermal Resistance, Junction to Case 2.5 /W
Rth j-a Thermal Resistance, Junction to Ambient 75 /W
ELECTRICAL CHARACTERISTICS (TC=25 unless otherwise specified)
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.4 A 1.0 V
VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 0.8 A 1.5 V
ICES Collector Cutoff Current VCE=Rated VCEO; VBE= 0 10 A
IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 A
hFE-1 DC Current Gain IC= 2A ; VCE= 1V 60
hFE-2 DC Current Gain IC= 4A ; VCE= 1V 40
COB Output Capacitance VCB= 10V, f= 1.0MHz 130 pF
fT Current-GainBandwidth Product IC=0.5A;VCE= 10V;ftest=20MHz 50 MHz

Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 4.470 4.670 0.176 0.184
A1 2.520 2.820 0.099 0.111
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
E1 12.060 12.460 0.475 0.491
e
e1 4.980 5.180 0.196 0.204
F 2.590 2.890 0.102 0.114
h 0.000 0.300 0.000 0.012
L 13.400 13.800 0.528 0.543
L1 3.560 3.960 0.140 0.156
3.735 3.935 0.147 0.155
0.100 TYP 2.540 TYP

2409302300_Slkor-SL44H11_C5155410.pdf

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